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The Sputtering Technique

  • Koukou SuuEmail author
Chapter
Part of the Topics in Applied Physics book series (TAP, volume 93)

Abstract

In this chapter, the formation of ferroelectric films using the sputtering technique is described. A main topic is a mass production system for Pb(Zr,Ti)O\(_{3}\) (PZT) films, which includes discussions on the concept of the system, optimization of the sputtering conditions, the ferroelectric properties of sputtered PZT films, and so on. It is concluded from the switching charge data of PZT films sputtered on 1000 substrates that the uniformity and stability of the system are excellent. Sputtering data for related materials, such as SrBi\(_{2}\)Ta\(_{2}\)O\(_{9}\) films and hydrogen barrier layers, are also presented in the last part of this chapter.

Keywords

77.84.B 68.55.J 

Keywords

77.84.B 68.55.J 

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Authors and Affiliations

  1. 1.ULVAC Inc.

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