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Novel Si-Substituted Ferroelectric Films

  • Takeshi KijimaEmail author
  • Hiroshi IshiwaraEmail author
Chapter
Part of the Topics in Applied Physics book series (TAP, volume 93)

Abstract

In this chapter, properties of novel Si-substituted ferroelectric films are presented. The films are a solid solution between Bi\(_{2}\)SiO\(_{5}\) (BSO) and conventional ferroelectric materials such as Bi\(_{4}\)Ti\(_{3}\)O\(_{12}\), SrBi\(_{2}\)Ta\(_{2}\)O\(_{9}\), and Pb(Zr,Ti)O\(_{3}\), which were formed by a sol-gel spin-coating method. It was found that BSO enhanced crystallization of the ferroelectric materials and finally formed solid solutions with them. As a result, the crystallization temperature of the films decreased by 150--200 C, and the ferroelectric and leakage current characteristics did not degrade even in an ultra-thin film of 13 nm in thickness. It was also found that the ferroelectric and insulating characteristics of the BSO-added films were dramatically improved by annealing in high-pressure oxygen up to 9.9 atm. A three-orders-of-magnitude improvement of the leakage current density was observed in BSO-added BLT films after annealing at 9.9 atm, while a pronounced increase in the saturation polarization was observed in BSO-added SBT and PZT films.

Keywords

77.84.B 68.55.J 

Keywords

77.84.B 68.55.J 

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Authors and Affiliations

  1. 1.Technology Platform Research Center, Seiko Epson Corp.
  2. 2.Frontier Collabrative Research Center, Tokyo Institute of Technology

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