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Light Generation, Amplification, and Wavelength Conversion via Stimulated Raman Scattering in Silicon Microstructures

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Silicon Photonics

Part of the book series: Topics in Applied Physics ((TAP,volume 94))

Abstract

This chapter is organized in two parts. In part one, we present the theory of Spontaneous and Stimulated Raman Scattering (SRS), as well as that of Coherent Anti Stokes Raman Scattering (CARS) in silicon. The treatment of these phenomena in silicon is more complex than that in silica fiber, due to crystal symmetry considerations. We show that, because of the intrinsically large Raman coefficient in silicon, and the tight optical confinement in silicon-on-SiO2 waveguides, both amplification and wavelength conversion can be achieved in waveguides with millimeter scale lengths. In part two, we review our recent demonstration of spontaneous Raman emission, optical gain, and wavelength conversion in silicon waveguides. The chapter concludes by discussing practical issues and methods for realizing commercially viable devices.

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Jalali, B., Claps, R., Dimitropoulos, D., Raghunathan, V. Light Generation, Amplification, and Wavelength Conversion via Stimulated Raman Scattering in Silicon Microstructures. In: Silicon Photonics. Topics in Applied Physics, vol 94. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-39913-1_6

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  • DOI: https://doi.org/10.1007/978-3-540-39913-1_6

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-21022-1

  • Online ISBN: 978-3-540-39913-1

  • eBook Packages: Springer Book Archive

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