Effects of Temperature in Deep-Submicron Global Interconnect Optimization
The resistance of on-chip interconnects and the current drive of transistors is strongly temperature dependent. As a result, the interconnect performance is affected by the temperature in a sizeable proportion. In this paper we evaluate thermal effects in global RLC interconnects and quantify their impact in a standard optimization procedure in which repeaters are used. By evaluating the difference between a simple RC and an accurate RLC model, we show how the temperature induced increase of resistance may reduce the impact of inductance. We also project the evolution of such effects in future technology nodes, according to the semiconductor roadmap.
Unable to display preview. Download preview PDF.
- 1.Bakoglu, H.B.: Circuits, Interconnections and Packaging for VLSI. Addison-Wesley, Reading (1990)Google Scholar
- 5.Ajami, A.H., et al.: Analysis of Non-Uniform Temperature-Dependent Interconnect Performance in High Performance ICs. In: Proc. DAC 2001, pp. 567–572 (2001)Google Scholar
- 6.Ajami, A.H., et al.: Analysis of Substrate Thermal Gradient Effects on Optimal Buffer Insertion. In: Proc. of ICCAD, November 2001, pp. 44–48 (2001)Google Scholar
- 7.The national technology roadmap for semiconductors, SIA (2001)Google Scholar
- 12.Grover, F.W.: Inductance Calculations: Working Formulas and Tables. Van Nostrand, New York (1946)Google Scholar