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Electron Scattering and Diffusion

  • Chapter
Scanning Electron Microscopy

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 45))

Abstract

Elastic and inelastic scattering processes result in zig-zag trajectories of electrons in a solid until the electrons come to rest by gradual deceleration or leave the specimen as backscattered electrons. Elastic large-angle scattering differs considerably from that characterized by the widely used Rutherford cross-sections and Mott cross-sections have to be used for more accurate calculations. The ionization cross-section of inner shells is important for calculating the number of characteristic x-ray quanta generated. The influence of inelastic scattering on deceleration can be treated by Bethe’s continuousslowing-down approximation without knowing the inelastic scattering processes in detail. The angular, spatial and energy distributions after passage through thin films or surface layers can be treated by multiple-scattering theories. The total electron diffusion is a very complex process. The properties of practical interest are the dependence of transmission on specimen thickness, the electron range and also the depth and spatial distributions of dissipated energy since this can generate electron-hole pairs in semiconductors, phonons or heat and can cause radiation damage and charging by the electron beam. The so-called diffusion models are very crude and detailed calculations using the transport equation or the Monte Carlo method can only be made numerically on a computer.

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Reimer, L. (1998). Electron Scattering and Diffusion. In: Scanning Electron Microscopy. Springer Series in Optical Sciences, vol 45. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-38967-5_3

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