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Linewidth Characteristics of (GaA1)As Semiconductor Diode Lasers

  • A. Mooradian
  • D. Welford
  • M. W. Fleming
Conference paper
Part of the Springer Series in Optical Sciences book series (SSOS, volume 30)

Abstract

Use of semiconductor diode lasers as high resolution spectral sources requires an understanding of the linewidth characteristics of these devices. Reported here is a study of the power and temperature dependence of the fundamental linewidth of continuously operating (GaAl)As single mode diode lasers. The linewidths were observed to decrease linearly with reciprocal output power with a slope significantly greater than the calculated Schawlow-Townes linewidth at room temperature. At liquid nitrogen temperature, within experimental error, the slope decreased to the Schawlow-Townes limit and had a finite contribution which is attributed to index fluctuations arising from electron density fluctuations in the small gain volume of these devices.

Keywords

Diode Laser External Cavity Liquid Helium Temperature Gain Volume Semiconductor Diode Laser 
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References

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    M. Ito and T. Kimura, IEEE J. Quantum Electron. 16, 910 (1980).ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1981

Authors and Affiliations

  • A. Mooradian
    • 1
  • D. Welford
    • 1
  • M. W. Fleming
    • 1
  1. 1.Lincoln LaboratoryMassachusetts Institute of TechnologyLexingtonUSA

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