Abstract
Much of the study of Raman scattering in crystalline materials focuses on the few allowed single phonon processes. The corresponding interest in amorphous materials is on the breakdown of selection rules and the broad range of allowed scattering processes. Because of the absence of a well defined crystal momentum, a larger wealth of information about vibrational spectra can be extracted from Raman scattering in amorphous materials. In this chapter we shall be concerned with the experimental and theoretical results obtained from the prototypical elemental and compound amorphous semiconductors and how those results have been used to elucidate the vibrational levels and structure of the amorphous state. The structural results are both supplementary and complementary to information obtainable by the traditional structural analysis techniques of X-ray, electron and neutron diffraction.
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References
N. F. Mott, E. A. Davis: Electronic Processes in Non-Crystalline Materials (Oxford University Press, London, 1971).
J. Stuke, W. Brennig (Eds.): Proc. 5th Intern. Conf. Liquid and Amorphous Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974).
J.M. Ziman: J. Phys. C2, 1704 (1969).
R.J. Bell: Rep. Progr. Phys. 35, 1315 (1972).
P. Dean: Rev. Mod. Phys. 44, 127 (1972).
J. Wong, C.A. Angell: Appl. Spectrosc. Rev. 4, 155 (1971) and references therein.
M. Hass: J. Phys. Chem. Solids 31, 415 (1970).
W.B. Grant, H. Schulz, S. Hüfner, J. Pelzl: Phys. Stat. Sol. (b), 60, 331 (1973) and references therein.
M. Balkanski (Ed.): Proc. 2nd Intern. Conf. Light Scattering in Solids, Paris, 1971 (Flammarion, Paris, 1971), Chapter IV.
P. Chaudari, J. Cuomo, R.J. Gambino: Appl. Phys. Letters 22, 337 (1973).
H. O. Hooper, A. M. de Graaf (Eds.): Amorphous Magnetism (Plenum, New York, 1973).
A.L. Robinson: Science 182, 908 (1973).
G. Lucovsky: In Proc. 5th Intern. Conf. Liquid and Amorphous Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 1099.
H. Böttger: Phys. Stat. Sol. (b) 62, 9 (1974).
R. Shuker, R. Gamon: Phys. Rev. Letters 25, 222 (1970).
R. Shuker, R.W. Gamon: In Proc. 2nd Intern. Conf Light Scattering in Solids, Paris, 1971 (Flammarion Sciences, Paris, 1971), p. 334.
M.H. Brodsky, S. Kirkpatrick, D. Weaire (Eds.): Proc. Intern. Tetrahedrally Bonded Amorphous Semiconductors (American Institute of Physics, New York, 1974).
M.H. Brodsky: J. Vac. Sci. Technol. 8, 125 (1971).
S.C. Moss, D. Adler: Comments in Solid State Phys. 5, 47 (1973).
J.E. Smith, Jr., M.H. Brodsky, B.L. Crowder, M.I. Nathan, A. Pinczuk: Phys. Rev. Letters 26, 642 (1971).
R. Alben, J.E. Smith, Jr., M.H. Brodsky, D. Weaire: Phys. Rev. Letters 30, 1141 (1973).
M. Wihl, M. Cardona, J. Tauc: J. Non-Cryst. Solids 8–10, 172 (1972).
J.E. Smith, Jr., M.H. Brodsky, B.L. Crowder, M.I. Nathan: In Proc. 2nd. Intern. Conf. Light Scattering in Solids, Paris, 1971 (Flammarion, Paris, 1971), p. 330.
G. Dolling, R.A. Cowley: Proc. Phys. Soc, London 88, 463 (1966).
R.W. Stimets, J. Waldman, J. Lin, T.S. Chang, R.J. Temkin, G.A.N. Connell: Sol. Stat. Comm. 13, 1485 (1973).
W. Prettl, N.J. Shevchik, M. Cardona: Phys. Stat. Sol. (b) 59, 241 (1973).
M.H. Brodsky, A. Lurio: Phys. Rev. B9. 1646 (1974).
F.R. Ladan, A. Zylbersztejn: Phys. Rev. Letters 28, 1198 (1972).
B. Schröder: In Proc. Intern. Conf. Tetrahedrally Bonded Amorphous Semiconductors, Yorktown, 1974 (American Institute of Physics, New York, 1974), p. 114.
J.D. Axe, D.T. Keating, G.S. Cargill, III, R. Alben: In Proc. Intern. Conf. Tetrahedrally Bonded Amorphous Semiconductors, Yorktown, 1974 (American Institute of Physics, New York, 1974), p. 279.
J.S. Lannin: Sol. Stat. Comm. 11, 1523 (1972).
J.S. Lannin: Sol. Stat. Comm. 12, 947 (1973).
J. S. Lannin: In Proc. 5th Intern. Conf. Amorphous and Liquid Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 1245.
A.J. Martin, W. Brenig: Phys. Stat. Sol. (b) 64, 163 (1974).
L. von Heimendahl: In Proc. Intern. Conf Tetrahedrally Bonded Amorphous Semiconductors, Yorktown, 1974 (American Institute of Physics, New York, 1974), p. 274.
G. A.N. Connell: Phys. Stat. Solidi (b) 69, 9 (1975).
C.N. King, W.A. Phillips, J.P. de Neufville: Phys. Rev. Letters 32, 538 (1974).
P. Flubacher, A.J. Leadbetter, J.A. Morrison, B.P. Stoicheff: J. Phys. Chem. Solids 12, 53 (1959).
A. S. Barker: In Far Infrared Properties of Solids, ed. by S. S. Mitra and S. Nudelman (Plenum Press, New York, 1970), p. 247.
R. Shuker, R. Gamon: Phys. Lett. 33A, 96 (1970).
B.L. Crowder, J.E. Smith, Jr., M.H. Brodsky, M.I. Nathan: In Proc. Second Intern. Conf Ion Implantation, Garmisch (1971), p. 255.
J. E. Smith, Jr., M. H. Brodsky, B. L. Crowder, M. I. Nathan: J. Non-Cryst. Solids 8–10, 179 (1972).
J. C. Bourgoin, J. F. Morhange, R. Beserman: Rad. Effects 22, 205 (1974).
M. H. Brodsky, R. S. Title: Phys. Rev. Letters 23, 581 (1969).
R. S. Title, M. H. Brodsky, B. L. Crowder: In Proc. 10th Intern. Conf. Physics of Semiconductors, Cambridge, Mass., 1970 (U. S. Atomic Energy Comm., Oak Ridge, 1970). p. 794.
W. Beyer, J. Stuke: In Proc. 5th Intern. Conf. Amorphous and Liquid Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 251.
M. H. Brodsky, R. J. Gambino, J. E. Smith, Jr., Y. Yacoby: Phys. Stat. Sol. (b) 52, 609 (1972).
E. Finkman, A. P. Defonzo, J. Tauc: In Proc. 12th Intern. Conf. on the Physics of Semiconductors, Stuttgart (1974), p. 1022.
A. Solin, R. J. Kobliska: In Proc. 15th Inter. Conf. Liquid and Amorphous Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 1251.
J. F. Morhange, R. Beserman, J. C. Bourgoin, P. R. Brosius, Y. H. Lee, L. J. Cheng, J. W. Corbett: Proc. Intern. Conf. Ion Implantation, Kyoto (1974)
M. I. Nathan, J. E. Smith, Jr., K. N. Tu: J. Appl. Phys. 45, 2370 (1974).
R. Alben, D. Weaire, J. E. Smith, Jr., M. H. Brodsky: In Proc. 5th Intern. Conf. Amorphous and Liquid Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 1231.
R. Alben, D. Weaire, J. E. Smith, Jr., M. H. Brodsky: Phys. Rev. B11, 2271 (1975).
P. N. Keating: Phys. Rev. 145, 637 (1966).
R. H. Wentorf, Jr., J. S. Kasper: Science 139, 338 (1963).
M. F. Thorpe: Phys. Rev. B8, 5352 (1973).
R. Zallen: Phys. Rev. 113, 824 (1968).
M. F. Thorpe: In Proc. Intern. Conf. Tetrahedrally Bonded Amorphous Semiconductors, Yorktown, 1974 (American Institute of Physics, New York, 1974), p. 267.
M. Born: Ann. Phys. (Leipzig) 44, 605 (1914).
S. S. Mitra, D. K. Paul, Y. F. Tsay, B. Bendow: In Proc. Intern. Conf. Tetrahedrally Bonded Amorphous Semiconductors, Yorktown, 1974 (American Institute of Physics, New York, 1974), p. 284.
D. Weaire, R. Alben: Phys. Rev. Lett. 29, 1505 (1972).
D. Weaire, M. F. Thorpe: Phys. Rev. B4, 2508 (1971).
M. F. Thorpe, D. Weaire, R. Alben: Phys. Rev. B7, 3777 (1972).
R. Alben, D. Weaire, P. Steinhardt: J. Phys. C6, L384 (1973).
R. Alben: In Proc. Intern. Conf. Tetrahedrally Bonded Amorphous Semiconductors, Yorktown, 1974 (American Institute of Physics, New York, 1974), p. 249.
G. A. N. Connell: In Proc. 12th Intern. Conf. Physics of Semiconductors, Stuttgart (1974), p. 1003.
J. S. Lannin: In Proc. Intern. Conf. Tetrahedrally Bonded Amorphous Semiconductors, Yorktown, 1974 (American Institute of Physics, New York, 1974), p. 260.
M. Gorman, S. A. Solin: Solid State Comm. 15, 761 (1974).
N. J. Shevchik, J. S. Lannin, J. Tejeda: Phys. Rev. B7, 3987 (1973).
J. Mort: In Proc. 5th Intern. Conf. Amorphous and Liquid Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 1361.
A. R. Hilton: Appl. Optics 5, 1877 (1966).
S. R. Ovshinsky: J. Non-Cryst. Solids 2, 99 (1970).
G. Lucovsky, R. M. Martin: J. Non-Cryst. Solids 8–10, 185 (1972).
G. Lucovsky, R. M. White: Phys. Rev. B8, 660 (1973).
G. Lucovsky, R. M. Martin: To be published.
J. E. Smith, Jr., M. H. Brodsky, R. J. Gambino: Bull. Am. Phys. Soc. II 17, 336 (1972).
A. T. Ward: J. Phys. Chem. 72, 4133 (1968).
I. Srb, A. Vasko: Czech. J. Phys. B 13, 827 (1963).
A. Anderson, Y. T. Loh: Canad. J. Chem. 44, 879 (1969).
R. Zallen: Phys. Rev. B9, 4485 (1974).
H. Gerding, R. Westrik: Recueil Trav. Chim. Pays-Bas 62, 68 (1943).
G. Lucovsky, A. Mooradian, W. Taylor, G. B. Wright, R. C. Keezer: Solid State Comm. 5, 113 (1967).
G. Lucovsky: In Physics of Selenium and Tellurium, ed. by W. C. Cooper (Pergamon Press, Oxford, 1964), p. 255.
A. Mooradian, G. B. Wright: In Physics of Selenium and Tellurium, ed. by W. C. Cooper (Pergamon Press, Oxford, 1969), p. 169.
J. Schottmiller, M. Tabak, G. Lucovsky, A. Ward: J. Non-Cryst. Solids 4, 80 (1970).
G. Brielieb: Z. Phys. Chem. A144, 321 (1929).
A. Eisenberg, A. V. Tobalsky: J. Polym. Sci. 46, 19 (1960).
R. M. Martin, G. Lucovsky: In Proc. Ylth Intern. Conf. Physics of Semiconductors, Stuttgart (1974).
N. B. Zakharova, Yu. A. Chekasov: Sov. Phys. -Solid State 12, 1572 (1971).
A. S. Pine, G. Dresselhaus: Phys. Rev. B4, 356 (1971).
R. Zallen, M. L. Slade, A. T. Ward: Phys. Rev. B3, 4257 (1971).
R. Zallen, M. Slade: Phys. Rev. B9, 1629 (1974).
I. G. Austin, E. S. Garbett: Phil. Mag. 23, 17 (1971).
A. T. Ward, M. B. Myers: J. Phys. Chem. 73, 1374 (1969).
G. Lucovsky: Phys. Rev. B6, 1480 (1972).
R. J. Kobliska, S. A. Solin: Solid State Somm. 10, 231 (1972).
R. J. Kobliska, S. A. Solin: J. Non-Cryst. Solids 8–10, 91 (1972).
R. J. Kobliska, S. A. Solin: Phys. Rev. B8, 756 (1973).
Yu. F. Markov, N. B. Reshetnyak: Fiz. Tverd. Tela 14, 1242 (1972), translated Sov. Phys. -Solid State 14, 1063 (1972).
E. Finkman, A. Defonzo, J. Tauc: In Proc. 5th Intern. Conf Amorphous and Liquid Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 1275.
R. O. Pohl, W. F. Love, R. B. Stephens: In Proc. 5th Intern. Conf. Amorphous and Liquid Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 1121.
D. C. Taylor, S. G. Bishop, D. L. Mitchell: Phys. Rev. Letters 27, 414 (1973).
J. P. de Neufville: In Proc. 5th Intern. Conf. Amorphous and Liquid Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 1351.
G. Lucovsky, J. P. de Neufville, F. L. Galeener: Phys. Rev. B9, 1591 (1974).
G. Lucovsky, F. L. Galeener, R. C. Keezer, R. H. Geils, H. A. Six: Phys. Rev. B10, 5134(1974).
P. Tronc, M. Bensoussan, A. Brenac, C. Sebenne: Phys. Rev. B8, 5947 (1973).
G. B. Fisher, J. Tauc, Y. Verhelle: In Proc. 5th Intern. Conf. Liquid and Amorphous Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 1259.
S. C. Rowland, S. Narasimhan, A. Bienenstock: J. Appl. Phys. 43, 2741 (1972).
L. Cervinka, A. Hruby: In Proc. 5th Intern. Conf. Liquid and Amorphous Semiconductors, Garmisch, 1973 (Taylor and Francis, London, 1974), p. 431.
R. L. Mozzi, B. E. Warren: J. Appl. Cryst. 2, 164 (1969).
H. Phillip: J. Non-Cryst. Solids 8–10, 627 (1972).
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Brodsky, M.H. (1975). Raman Scattering in Amorphous Semiconductors. In: Cardona, M. (eds) Light Scattering in Solids. Topics in Applied Physics, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-37568-5_5
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DOI: https://doi.org/10.1007/978-3-540-37568-5_5
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