Abstract
In this work, an Indium Antimonide (InSb) quantum well transistor is investigated using full-band Monte Carlo simulations. The steady-state characteristic of the device is first analyzed, showing particle transport along the two-dimensional electron gas (2DEG). The small-signal behavior of the device is also investigated. Finally, the noise analysis is performed, allowing for a two-dimensional mapping of the noise within the device.
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Branlard, J. et al. (2006). Cellular Monte Carlo Modeling of AlxIn1−xSb/InSb Quantum Well Transistors. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_82
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DOI: https://doi.org/10.1007/978-3-540-36588-4_82
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
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