Abstract
In this work we extended our Cellular Monte Carlo (CMC) device modeling code to include the computation of the energy states in dilute magnetic semiconductors using an ab-initio code based on the Korringa, Kohn and Rostoker coherent potential approximation method (KKR-CPA). The CMC simulator was modified to explicitly model spin transport in bulk materials using a full-band representation of the electronic structure. The last part of this work was devoted to the implementation of the major scattering mechanisms responsible for spin flip in III-V semiconductors for which results are presented.
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© 2006 Springer-Berlag Berlin Heidelberg
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Beysserie, S., Remond, I., Goodnick, S., Saraniti, M. (2006). Full-Band Modeling of Magnetic Semiconductors. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_81
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DOI: https://doi.org/10.1007/978-3-540-36588-4_81
Publisher Name: Springer, Berlin, Heidelberg
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