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Interface Related Radiative Recombination on a Type-II Broken-Gap Single GalnAsSb/InAs Heterojunction

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Nonequilibrium Carrier Dynamics in Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 110))

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Abstract

Magneto-photoluminescence studies have been performed on the type-II broken-gap GalnAsSb/InAs single heterostructures with 2D-electon channel at the interface containing two occupied energy subbnads. Photoluminescence spectra manifest a set of pronounced emission bands in the spectral region of 0.3–0.5 eV and it has been investigated in magnetic fields up to 10 T.

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References

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Author information

Authors and Affiliations

  1. Institute of Radio-engineering and Electronics of RAS, Moscow, Russia

    K. A. Korolev

  2. A. F. Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia

    K. D. Moiseev, V. A. Berezovets, M. P. Mikhailova, Yu. P. Yakovlev & R. V. Parfeniev

  3. Dpartment of ECE, Tufts University, Medford, MA, 02155, USA

    K. A. Korolev

  4. Department of Physics, SUNY at Buffalo, Buffalo, NY, 14260, USA

    C. J. Meinning & B. D. McCombe

Authors
  1. K. A. Korolev
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  2. K. D. Moiseev
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  3. V. A. Berezovets
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  4. M. P. Mikhailova
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  5. Yu. P. Yakovlev
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  6. R. V. Parfeniev
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  7. C. J. Meinning
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  8. B. D. McCombe
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Editor information

Editors and Affiliations

  1. Department of Electrical and Computer Engineering, Illinois Institute of Technology, Suite 103, Siegel Hall 3301 South Dearborn Street, Chicago, IL, 60616, USA

    M. Saraniti

  2. Institute for Advanced Science and Technolgy, University of Illinois, 405 Nroth Mathes Avenue, Urbana, IL, 61801, USA

    U. Ravaioli

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© 2006 Springer-Berlag Berlin Heidelberg

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Korolev, K.A. et al. (2006). Interface Related Radiative Recombination on a Type-II Broken-Gap Single GalnAsSb/InAs Heterojunction. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_75

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