Abstract
A Monte Carlo investigation of transport in sub-100 nm gate length SOI MOSFETs is presented. Each super-particle within the channel is followed individually: scattering mechanisms undergone, distance travelled, transit time, etc. are accounted for the calculation of average statistical quantities and their distribution functions at different channel positions, together with their dependence on the gate length. In this way, the influence of non-stationary phenomena and quasiballistic transport is evaluated.
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© 2006 Springer-Berlag Berlin Heidelberg
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Martín, M.J., Rengel, R. (2006). Transit Time and Velocity Distribution Functions in Decananometer Gate-Length SOI MOSFETs. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_69
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DOI: https://doi.org/10.1007/978-3-540-36588-4_69
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
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