Fermi-Dirac Statistics in Monte Carlo Simulations of InGaAs MOSFETs

Abstract

The potential performance of 80 and 35nm physical gate length In_0.2Ga_0.8As MOSFETs are compared with the equivalent Si and strained Si devices using ensemble Monte Carlo simulations. The 80 nm InGaAs MOSFET with a source/drain peak doping of 2×10¹⁹ cm⁻³ or a very high doping of 5×10¹⁹ cm⁻³ can outperform the equivalent strained Si MOSFET at both low and high drain biases. However, the 35 nm InGaAs MOSFET gives a performance comparable to the equivalent strained Si MOSFETs even with the source/drain doping of 5×10¹⁹ cm⁻³.