Skip to main content
SpringerLink
Log in

Impact Ionization and Avalanche Multiplication in AlGaAs: a Time-Resolved Study

  • Conference paper
Nonequilibrium Carrier Dynamics in Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 110))

  • 1105 Accesses

Abstract

Tracing ultrafast modifications of the Franz-Keldysh absorption spectrum of biased AlxGa1−xAs heterostructure diodes, we directly analyze the dynamical build up of a nonequilibrium carrier avalanche due to impact ionization for electric fields F > 350 kV/cm. The timescale of the carrier multiplication is found to be in the order of 10 ps depending on the applied bias. Monte Carlo simulations in a simplified band structure agree well with the experiment.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Similar content being viewed by others

References

  1. S. Picozzi, et al. Phys. Rev. Lett. 89, 197601 (2002).

    Article  ADS  Google Scholar 

  2. J. E. Pedersen, et al., Appl. Phys. Lett. 62, 1265 (1993).

    Article  ADS  Google Scholar 

  3. A. Leitenstorfer, et al., Phys. Rev. Lett. 82, 5140 (1999).

    Article  ADS  Google Scholar 

  4. H. Heesel, et al., Phys. Rev. B 47, 16000 (1993).

    Article  ADS  Google Scholar 

  5. M. Wraback, et al., Appl. Phys. Lett. 79, 1303 (2001).

    Article  ADS  Google Scholar 

  6. A. Schwanhäußer, et al., Phys. Rev. B 70, 085211 (2004).

    Article  ADS  Google Scholar 

  7. S. Adachi, Physical Properties III–V Semiconductor Compounds, Wiley, New York (1992)

    Book  Google Scholar 

  8. K. Hess, Advanced Theory of Semiconductor Devices, Prentice-Hall, Englewood Cliffs, NJ, (1988)

    Google Scholar 

  9. C. Jacoboni, L. Reggiani, Review of Modern Physics 55, 645 (1983)

    Article  ADS  Google Scholar 

  10. L. V. Keldysh, Soviet. Phys. JETP 34, 788 (1958)

    Google Scholar 

  11. D. Harrison, R. A. Abram, S. Brand, J. of Appl. Phys. 85, 8178 (1991)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Physik-Department E 11, Technische Universität München, München

    M. Betz & S. Trumm

  2. Max-Planck-Forschungsgruppe für Optik, Information und Photonik, Universität Erlangen, Erlangen

    M. Eckardt, A. Schwanhäußer, S. Malzer & G. H. Döhler

  3. Fachbereich Physik, Universität Konstanz, Konstanz

    F. Sotier & A. Leitenstorfer

  4. Materials Department, UCSB Santa Barbara, Santa Barbara

    M. Hanson, D. Driscoll & A. C. Gossard

Authors
  1. M. Betz
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. Trumm
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. Eckardt
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. Schwanhäußer
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. F. Sotier
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. Leitenstorfer
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. M. Hanson
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. D. Driscoll
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. A. C. Gossard
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. S. Malzer
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. G. H. Döhler
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Department of Electrical and Computer Engineering, Illinois Institute of Technology, Suite 103, Siegel Hall 3301 South Dearborn Street, Chicago, IL, 60616, USA

    M. Saraniti

  2. Institute for Advanced Science and Technolgy, University of Illinois, 405 Nroth Mathes Avenue, Urbana, IL, 61801, USA

    U. Ravaioli

Rights and permissions

Reprints and permissions

Copyright information

© 2006 Springer-Berlag Berlin Heidelberg

About this paper

Cite this paper

Betz, M. et al. (2006). Impact Ionization and Avalanche Multiplication in AlGaAs: a Time-Resolved Study. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_63

Download citation

Publish with us

Policies and ethics

Search

Navigation