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Measurements of the Electrical Excitation of QH-Devices in the Real Time Domain

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Nonequilibrium Carrier Dynamics in Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 110))

Abstract

In these measurements we have investigated the time scale of the excitation of electrons leading to a transition from the quantum Hall state to the dissipative state in the two-dimensional electron system of GaAs/AlGaAs heterostructures with Corbino geometry. The breakdown of the quantum Hall effect occurs after a certain time (2 ≤ τ resp ≤ 20 ns) that is a function of applied voltage (pulse amplitude), magnetic field and electron mobility.

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© 2006 Springer-Berlag Berlin Heidelberg

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Vasile, G., Stellmach, C., Hein, G., Nachtwei, G. (2006). Measurements of the Electrical Excitation of QH-Devices in the Real Time Domain. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_62

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