Abstract
We report the realization of highly-efficient light emitting MOS devices which are based on hot-electron excitation of rare-earth ions implanted into SiO2. The implantation of Gd+ and Tb+ ions yields emission wavelengths of 316 nm and 541 nm with external quantum efficiencies up to 1% and 16%, respectively. The observed threshold electric fields for observing electroluminescence are in accordance with the injection of hot electrons via Fowler-Nordheim tunneling into SiO2 at field strengths in the range of 8–9 MV/cm. The presence of different electroluminescence bands of the Tb-implanted devices allows us to study details of the hot-electron excitation process.
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© 2006 Springer-Berlag Berlin Heidelberg
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Dekorsy, T., Sun, J., Skorupa, W., Helm, M., Rebohle, L., Gebel, T. (2006). Traditional Hot-Electron MOS Devices for Novel Optoelectronic Applications. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_60
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DOI: https://doi.org/10.1007/978-3-540-36588-4_60
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