Abstract
We present the results of a three-dimensional, self-consistent ballistic quantum mechanical simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor (MOSFET) with channel lengths of approximately 10 nm. We find that these devices exhibit exceptional Ion/Ioff ratio, reasonable subthreshold swing and reduced threshold voltage variation. Finally, we compare the performance of the 10 nm InAs tri-gate device to a similar silicon device. We find that, when a suitable gate material is chosen, the InAs devices perform comparably to silicon devices in the ballistic limit.
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References
M.J. Gilbert and D.K. Ferry, “Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor-field-effect-transistors,” J. Appl Phys., 95, 7954–7960, 2004.
D.D. Johnson, “Modified broyden’s method for accelerating convergence in self-consistent calculations,” Phys. Rev. B, 38, 12807–12813, 1988.
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© 2006 Springer-Berlag Berlin Heidelberg
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Gilbert, M.J., Ferry, D.K. (2006). Technological Crossroads: Silicon or III–V for Future Generation Nanotransistors. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_56
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DOI: https://doi.org/10.1007/978-3-540-36588-4_56
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
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