Giant Increase of Electron Saturated Drift Velocity in a MODFET Channel

Mokerov, V. G.; Pozela, J.; Pozela, K.; Juciene, V.

doi:10.1007/978-3-540-36588-4_55

V. G. Mokerov³,
J. Pozela⁴,
K. Pozela⁴ &
…
V. Juciene⁴

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 110))

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Abstract

The tenfold increase in electron saturated drift velocity at high electric fields in the AlGaAs/GaAs MODFET channel with InAs inserted layers containing quantum dots (QDs) in a GaAs quantum well is observed. The maximal drift velocity exceeding 10⁸ cm/s is obtained. The maximal current density and transconductance of the MODFET with QDs increasing up to 35 A/cm and 10³ mS/mm, respectively, are observed.

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References

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Authors and Affiliations

Institute of UHF Semiconductor Electronics, RAS, Moscow, Russia
V. G. Mokerov
Semiconductor Physics Institute, Vilnius, Lithuania
J. Pozela, K. Pozela & V. Juciene

Authors

V. G. Mokerov
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J. Pozela
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K. Pozela
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V. Juciene
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Editors and Affiliations

Department of Electrical and Computer Engineering, Illinois Institute of Technology, Suite 103, Siegel Hall 3301 South Dearborn Street, Chicago, IL, 60616, USA
M. Saraniti
Institute for Advanced Science and Technolgy, University of Illinois, 405 Nroth Mathes Avenue, Urbana, IL, 61801, USA
U. Ravaioli

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Mokerov, V.G., Pozela, J., Pozela, K., Juciene, V. (2006). Giant Increase of Electron Saturated Drift Velocity in a MODFET Channel. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_55

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DOI: https://doi.org/10.1007/978-3-540-36588-4_55
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
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