Abstract
The roles of different free exciton formation mechanisms in bulk AlGaAs were studied. The dependencies of the shape of Hanle curves on excitation power were analyzed. It was shown that geminate exciton formation mechanism dominates at low excitation intensities.
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© 2006 Springer-Berlag Berlin Heidelberg
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Kozhemyakina, E.V., Efanov, A.V., Zhuravlev, K.S., Fuerst, J., Pascher, H. (2006). Predominance of Geminate Process of Exciton Formation in AlGaAs Layers at Low Excitation. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_53
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DOI: https://doi.org/10.1007/978-3-540-36588-4_53
Publisher Name: Springer, Berlin, Heidelberg
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