Abstract
We propose an extension (TR-PNP) of the traditional PNP model by explicitly taking into account the effects of ion trapping and release. Our solution to this problem has originated from the treatment introduced by Shockley, Read and Hall model in semiconductor theory. Simulation results are presented for the Gramicidin A channel by using both the TR-PNP and the PNP models and are compared with experiments.
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Hu, S., Hess, K. (2006). Simulations of the Gramicidin A Channel by Using the TR-PNP Model. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_49
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DOI: https://doi.org/10.1007/978-3-540-36588-4_49
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
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