Abstract
In this work, temprature dependent ballistic electron transport through spin valve transistor structures is investigated by Ballistic Electron Emission Microscopy (BEEM). Co-Cu-Permalloy-Au layers sputtered onto n-type GaAs bulk substrates were studied between room temperature and T=10K. The magnetocurrent increases from 360% at room temperature to 790% at T=10K. The magneto-current was also investigated as a function of the electron energy, where we observe a saturation behavior at electron energies above 1.4 eV for all temperatures.
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© 2006 Springer-Berlag Berlin Heidelberg
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Heer, R., Smoliner, J., Bornemeier, J., Brückl, H. (2006). Temperature Dependent Transport in Spin Valve Transistor Structures. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_35
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DOI: https://doi.org/10.1007/978-3-540-36588-4_35
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
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