A 2D-NEGF Quantum Transport Study of Unintentional Charges in a Double Gate Nanotransistor

Martinez, A.; Barker, J. R.; Svizhenko, A.; Bescond, M.; Anantram, M. P.; Brown, A. R.; Asenov, A.

doi:10.1007/978-3-540-36588-4_27

A. Martinez³,
J. R. Barker³,
A. Svizhenko⁴,
M. Bescond³,
M. P. Anantram⁴,
A. R. Brown³ &
…
A. Asenov³

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 110))

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Abstract

The aim of this paper is to study the effect on a Double Gate (DG) MOSFET of unintentional dopants located in the channel region using a ballistic 2D self-consistent Non-equilibrium Green’s function (NEGF) approach. The effect of mass anisotropy and the particular configuration of the unintentional dopant atoms on the I _D-V _G characteristic have been studied.

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References

IEDM Technical Digest, 2003, 2004
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A. Svizhenko et al, J. App. Phys. 91, 2343, 2002
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W. J. Gross et al, J. App. Phys. 91, 3738, 2002, A. R. Brown et al IEEE Trans. Nanotechnology 1, 195, 2002
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Authors and Affiliations

Dept of Electronics & Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, UK
A. Martinez, J. R. Barker, M. Bescond, A. R. Brown & A. Asenov
NASA Ames Research Center, Moffet Field, California, USA
A. Svizhenko & M. P. Anantram

Authors

A. Martinez
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J. R. Barker
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A. Svizhenko
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M. Bescond
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M. P. Anantram
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A. R. Brown
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A. Asenov
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Editors and Affiliations

Department of Electrical and Computer Engineering, Illinois Institute of Technology, Suite 103, Siegel Hall 3301 South Dearborn Street, Chicago, IL, 60616, USA
M. Saraniti
Institute for Advanced Science and Technolgy, University of Illinois, 405 Nroth Mathes Avenue, Urbana, IL, 61801, USA
U. Ravaioli

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Martinez, A. et al. (2006). A 2D-NEGF Quantum Transport Study of Unintentional Charges in a Double Gate Nanotransistor. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_27

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DOI: https://doi.org/10.1007/978-3-540-36588-4_27
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
Online ISBN: 978-3-540-36588-4
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