Abstract
A Monte Carlo scheme is described for simulating electron-phonon-plasmon scattering in realistic high-κ gate stack Si MOSFETs that accounts for hot electron effects, modulation of the electron-phonon-plasmon scattering rates by the interface boundary roughness and inhomogeneity of the dielectric layers.
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Barker, J.R. et al. (2006). Monte Carlo Study of Coupled SO Scattering in Si MOSFETs with High κ- Dielectric Gate Stacks: Hot Electron and Disorder Effects. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_25
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DOI: https://doi.org/10.1007/978-3-540-36588-4_25
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-36587-7
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