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Effect of Injector Doping on Non-Equilibrium Electron Dynamics in Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers

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Nonequilibrium Carrier Dynamics in Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 110))

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Abstract

The aim of this work is to report a detailed theoretical investigation, supported by the experimental measurements, of the influence of the injector doping level on the output characteristics and the working range limits in mid-infrared GaAs/AlGaAs quantum cascade lasers. A fully self-consistent Schrödinger - Poisson analysis based on the scattering rate equation approach was employed to simulate the above-threshold electron transport in the device. An onset of v-shaped local band edge bowing has been observed, preventing the resonant subband level alignment in the high pump current regime. The observed saturation of the maximal current, together with an increase of threshold current, limits the dynamic working range for higher doping levels.

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References

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Author information

Authors and Affiliations

  1. School of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK

    V. D. Jovanović, D. Indjin, N. Vukmirović, Z. Ikonić, P. Harrison & E. H. Linfield

  2. Thales Resarch and Technology, Domaine de Corbeville, 91404, Orsay, France

    H. Page, X. Marcadet & C. Sirtori

  3. Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, UK

    C. Worrall, H. Beere & D. A. Ritchie

Authors
  1. V. D. Jovanović
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  2. D. Indjin
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  3. N. Vukmirović
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  4. Z. Ikonić
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  5. P. Harrison
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  6. E. H. Linfield
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  7. H. Page
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  8. X. Marcadet
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  9. C. Sirtori
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  10. C. Worrall
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  11. H. Beere
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  12. D. A. Ritchie
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Editor information

Editors and Affiliations

  1. Department of Electrical and Computer Engineering, Illinois Institute of Technology, Suite 103, Siegel Hall 3301 South Dearborn Street, Chicago, IL, 60616, USA

    M. Saraniti

  2. Institute for Advanced Science and Technolgy, University of Illinois, 405 Nroth Mathes Avenue, Urbana, IL, 61801, USA

    U. Ravaioli

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© 2006 Springer-Berlag Berlin Heidelberg

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Jovanović, V.D. et al. (2006). Effect of Injector Doping on Non-Equilibrium Electron Dynamics in Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers. In: Saraniti, M., Ravaioli, U. (eds) Nonequilibrium Carrier Dynamics in Semiconductors. Springer Proceedings in Physics, vol 110. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_19

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