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Sperrschichtfeldeffekttransistoren

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Elektronische Bauelemente
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25.4 Literaturverzeichnis

  1. L.K. Nanver, E.J.G. Goudena. Design considerations for integrated high-frequency P-channel JFETs. IEEE Trans. Electron Devices, 35(11):1924–1934, 1988.

    Article  Google Scholar 

  2. W. Shockley. A unipolar „field-effect“ transistor. Proc. IRE, 40(11):1365–1376, 1952.

    Article  Google Scholar 

  3. W. Kellner, H. Kniepkamp. GaAs-Feldeffekttransistoren (Halbleiter-Elektronik Bd. 16). Springer, Heidelberg, 1989.

    Google Scholar 

  4. S.M. Sze (Ed.). High-Speed Semiconductor Devices. Wiley, New York, 1990.

    Google Scholar 

  5. D.A. Hodges, H.G. Jackson. Analysis and Design of Digital Integrated Circuits. Mc-Graw Hill, New York, second edition, 1988.

    Google Scholar 

  6. P. Heymann, M. Rudolph, H. Prinzler, R. Doerner, L. Klapproth, G. Böck. Experimental evaluation of microwave field-effect transistor noise models. IEEE Trans. Microwave Theory and Techniques, 47(2):156–163, 1999.

    Article  Google Scholar 

  7. S.M. Sze. Physics of Semiconductor Devices. Wiley, New York, second edition, 1982.

    Google Scholar 

  8. W.R. Curtice. A MESFET model for use in the design of GaAs integrated circuits. IEEE Trans. Microwave Theory and Techniques, 28(5):448–456, 1980.

    Article  Google Scholar 

  9. H. Statz, P. Newman, I.W. Smith, R.A. Pucel, H.A. Haus. GaAs FET device and circuit simulation in SPICE. IEEE Trans. Electron Devices, 34(2):160–169, 1987.

    Google Scholar 

  10. A.J. McCamant, G.D. McCormack, D.H. Smith. An improved GaAs MESFET model for SPICE. IEEE Trans. MTT, 38(6):822–824, 1990.

    Article  Google Scholar 

  11. D. Delagebeaudeuf, N.T. Linh. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET. IEEE Trans. Electron Devices, 29(6):955–960, 1982.

    Google Scholar 

  12. L.D. Nguyen, L. E. Larson, U.K. Mishra. Ultra-high-speed modulation-doped field-effect transistors: a tutorial review. Proc. IEEE, 80(4):494–518, 1992.

    Article  Google Scholar 

  13. J.-H. Lee, H.-S. Yoon, C.-S. Park, H.-M. Park. Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with wide head T-shaped gate. IEEE Electron Device Letters, 16(6):271–273, 1995.

    Article  Google Scholar 

  14. H. Fukuyama, K. Sano, K. Murata, H. Kitabayashi, Y. Yamana, T. Enoki, H. Sugahara. Photoreceiver module using an InP HEMT transimpedance amplifier for over 40 Gb/s. IEEE J. Solid-State Circuits, 39(10):1690–1696, 2004.

    Article  Google Scholar 

  15. U.K. Mishra, P. Parikh, Y.-F. Wu. AlGaN/GaN HEMTs-an overview of device operation and applications. Proc. IEEE, 90(6):1022–1031, 2002.

    Article  Google Scholar 

  16. R.J. Trew, G.L. Bilbro, W. Kuang, Y. Liu, H. Yin. Microwave AlGaN/GaN HFETs. IEEE Microwave Magazine, March 2005 pp. 56–66, 2005.

    Google Scholar 

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(2007). Sperrschichtfeldeffekttransistoren. In: Elektronische Bauelemente. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-34015-7_25

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