Abstract
In this paper a general model is developed for the simulation of one dimensional diffusion annealing. Our main interest is the determination of the diffusion coefficient from measured values at discrete space-time points within the sample. The method is based on a suitable reduction of the pde to a system of odes by a second order finite difference space discretization. The inverse problem is solved by implementation of the Levenberg-Marquardt method. This allows the estimation of the parameters and the determination of Cramér-Rao lower bounds.
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Malengier, B. (2005). Parameter Estimation of Si Diffusion in Fe Substrates After Hot Dipping and Diffusion Annealing. In: Li, Z., Vulkov, L., Waśniewski, J. (eds) Numerical Analysis and Its Applications. NAA 2004. Lecture Notes in Computer Science, vol 3401. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-31852-1_48
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DOI: https://doi.org/10.1007/978-3-540-31852-1_48
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-24937-5
Online ISBN: 978-3-540-31852-1
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