Abstract
In this tutorial, we give an introduction to the increasingly important effect of leakage in recent and upcoming technologies. The sources of leakage such as subthreshold leakage, gate leakage, pn-junction leakage and further GIDL, hot-carrier effect and punchthrough are identified and analyzed separately and also under PTV variations.
Since leakage will dominate power consumption in future technologies, we also review leakage optimization techniques and leakage estimation approaches supporting optimizations especially at higher abstraction levels.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
International Technology Roadmap for Semiconductors ITRS (2003), public.itrs.net/
Chandrakasan, A., Bowhill, W., Fox, F.: Design of High-Performance Microprocessor Circuits. IEEE Press, Los Alamitos (2001)
Keshavarzi, A., Roy, K., Hawkins, C.F.: Intrinsic Leakage in Low Power Deep Submicron CMOS ICs. In: Proc. Int’l Test Conf. 1997 (ITC 1997), p. 146 (1997)
Roy, K., Mukhopadhyay, S., Mahmoodi-Meimand, H.: Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits. Proc. of the IEEE 91(2) (2003)
Srinivasan, J.: An Overview of Static Power Dissipation. Internal report, rsim.cs.uiuc.edu/~srinivsn/Pubs/other/leakage.ps
Taur, Y., Ning, T.H.: Fundamentals of Modern VLSI Devices. Cambridge University Press, Cambridge (1998)
Fotty, D.: MOSFET Modeling With SPICE. Prentice Hall PTR, Englewood Cliffs (1997)
Mukhopadhyay, S., Raychowdhury, A., Roy, K.: Accurate Estimation of Total Leakage Current in Scaled CMOS Logic Circuits Based on Compact Current Modeling. In: Proc. on Design Automatisation Conference DAC (2003)
Liu, Z.H., et al.: Threshold Voltage Model for Deep-Submicrometer MOSFET’s. IEEE Trans. On Elec. Dev. (1993)
Mukhopadhyay, S., Roy, K.: Modeling and Estimation of Total Leakage Current in Nano-scaled CMOS Devices Considering the Effect of Parameter Variation. In: Int’l Symp. on Low Power Electronics and Design ISLPED (2003)
Rao, R.M., Burns, J.L., Devgan, A., Brown, R.B.: Efficient Techniques for Gate Leakage Estimation. In: Int’l Symp. on Low Power Electronics and Design ISLPED (2003)
Kim, N.S., Flautner, K., Hu, J.S., et al.: Leakage Current: Moore’s Law Meets Static Power. IEEE Computer 36(12) (2003)
Pagey, M.P.: Characterization and Modeling of Hot-Carrier Degradation in Sub- Micron NMOSFETs (2002), etd.library.vanderbilt.edu/ETD-db/theses/available/etd-0619102-103401/unrestricted/thesis.pdf
Pierret, R.: Semiconductor Device Fundamentals. Addison-Wesley, Reading (1996)
Semenov, O., Pradzynski, A., Sachdev, M.: Impact of Gate Induced Drain Leakage on Overall Leakage of Submicrometer CMOS VLSI Circuits. IEEE Trans. on Semicond. Manufacturing 15(1) (2002)
Narenda, S.: Leakage Issues in IC Design: Trends and challenges in scaling CMOS devices, circuits and systems. In: Proc. of Int’l Conf. on Computer Aided Design ICCAD (2003)
Rao, R., Srivastava, A., Blaauw, D., Sylvester, D.: Statistical Estimation of Leakage Current Considering Iter- and Intra-Die Process Variations. In: Int’l Symp. on Low Power Electronics and Design ISLPED (2003)
Devgan, A.: Leakage Issues in IC Design: Process and Environmental variations. In: Proc. of Int’l Conf. on Computer Aided Design ICCAD (2003)
Narendra, S., De, V., Borkar, S., Antoniadis, D., Chandrakasan, A.: Full-Chip Subthreshold Leakage Power Prediction Model for sum-0.18 μm CMOS. In: Int’l Symp. on Low Power Electronics and Design ISLPED (2002)
Su, H., Liu, F., Devgan, A., Acar, E., Nassif, S.: Full chip leakage estimation considering power supply and temperature variations. In: Int’l Symp. on Low Power Electronics and Design ISLPED (2003)
Aloul, F.A., Hassoun, S., Sakallah, K.A., Blaauw, D.: Robust SAT-Based Search Algorithm for Leakage Power Reduction. In: Proc. on Int’l Workshop on Power and Timing Modeling, Optimization and Simulation PATMOS (2002)
Chen, Z., Johnson, M., Wei, L., Roy, K.: Estimation of Standby Leakage Power in CMOS Circuits Considering Accurate Modeling of Transistor Stacks. In: Int’l Symp. on Low Power Electronics and Design ISLPED (1998)
Acar, E., Devgan, A., Rao, R., Liu, Y., Su, H., Nassif, S., Burns, J.: Leakage and Leakage Sensitivity Computations for Combinational Circuits. In: Int’l Symp. on Low Power Electronics and Design ISLPED (2003)
Cao, L.: Circuit Power Estimation Using Pattern Recognition Techniques. In: Proc. of Int’l Conf. on Computer Aided Design ICCAD (2002)
Butts, J.A., Sohi, G.S.: A static power model for architects. In: Proc. Int’l Symp. on Microarchitecture (2000)
Zhang, Y., Parikh, D., Stan, M., Sankaranarayanan, K., Skadron, K.: HotLeakage: A Temperature-Aware Model of Subthreshold and Gate Leakage for Architects. Tech Report CS-2003-05, Univ. of Virginia Dept. of Computer Science (2003)
HotLeakage estimator executable, lava.cs.virginia.edu/HotLeakage
Johnson, M.C., Somasekhar, D., Chiou, L.Y., Roy, K.: Leakage Control With Efficient Use of Transistor Stacks in Single Threshold CMOS. IEEE Trans. on VLSI Systems 10(1) (2002)
Tyagi, S., et al.: A 130 nm Generation Logic featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects. In: Dig. Tech. Papers Int. Electron Devices Meeting (2000)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2004 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Helms, D., Schmidt, E., Nebel, W. (2004). Leakage in CMOS Circuits – An Introduction. In: Macii, E., Paliouras, V., Koufopavlou, O. (eds) Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation. PATMOS 2004. Lecture Notes in Computer Science, vol 3254. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-30205-6_5
Download citation
DOI: https://doi.org/10.1007/978-3-540-30205-6_5
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-23095-3
Online ISBN: 978-3-540-30205-6
eBook Packages: Springer Book Archive