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A Study of Intervalley Scattering in n-Si Using Magnetophonon Resonance

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Proceedings of the Twelfth International Conference on the Physics of Semiconductors

Abstract

Magnetophonon spectroscopy is employed to investigate intervalley scattering in n-Si. The f- and g-type series are distinguished by uniaxial stress experiments. Phonons of energy 134K (g), 530K (f), 580K (f) and 690K (f) make the dominant contributions to the magnetophonon structure. Although the high energy phonons appear to have the strongest coupling, the group theoretically forbidden g-T.A. mode is an important scattering mechanism at low electric fields.

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References

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Authors and Affiliations

  1. Laboratoire de Physique des Solides, I.N.S.A., Toulouse, France

    J. C. Portal & S. Askenazy

  2. Clarendon Laboratory, Oxford, UK

    L. Eaves & R. A. Stradling

Authors
  1. J. C. Portal
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  2. L. Eaves
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  3. S. Askenazy
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  4. R. A. Stradling
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Editor information

Manfred H. Pilkuhn

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© 1974 Springer Fachmedien Wiesbaden

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Portal, J.C., Eaves, L., Askenazy, S., Stradling, R.A. (1974). A Study of Intervalley Scattering in n-Si Using Magnetophonon Resonance. In: Pilkuhn, M.H. (eds) Proceedings of the Twelfth International Conference on the Physics of Semiconductors. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-322-94774-1_43

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  • DOI: https://doi.org/10.1007/978-3-322-94774-1_43

  • Publisher Name: Vieweg+Teubner Verlag, Wiesbaden

  • Print ISBN: 978-3-519-03013-3

  • Online ISBN: 978-3-322-94774-1

  • eBook Packages: Springer Book Archive

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