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Metastable Self-Trapping and Anomalous Temperature Dependence of Hole Mobility

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Proceedings of the Twelfth International Conference on the Physics of Semiconductors

Abstract

Within a certain range of electron-phonon coupling constants, there exist metastable self-trapping states above the stable, mobile states of an electron. The anomalous temperature dependence of the drift mobilities of holes in TlBr and AgBr is ascribed to this effect.

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References

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Manfred H. Pilkuhn

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© 1974 Springer Fachmedien Wiesbaden

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Toyozawa, Y., Sumi, A. (1974). Metastable Self-Trapping and Anomalous Temperature Dependence of Hole Mobility. In: Pilkuhn, M.H. (eds) Proceedings of the Twelfth International Conference on the Physics of Semiconductors. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-322-94774-1_27

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  • DOI: https://doi.org/10.1007/978-3-322-94774-1_27

  • Publisher Name: Vieweg+Teubner Verlag, Wiesbaden

  • Print ISBN: 978-3-519-03013-3

  • Online ISBN: 978-3-322-94774-1

  • eBook Packages: Springer Book Archive

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