Abstract
Excitation spectra in the vicinity of the band gap energy of pure p-type GaAs are reported for low as well as high excitation level.
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References
As a review, see for example: Williams, E.W.; Bebb, H.B.: “Semiconductors and Semimetals”, Vol. 8, edited by R.K. Willardson and A.C. Beer, ( Academic Press, N.Y. ) 1972.
A review on high excitation phenomena in GaAs is given by: Göbel, E.; Pilkuhn, M.H.: Journ. de Physique 35, C3–191 (1974).
Ulbrich, R.: Phys. Rev. B 8, 5719 (1973).
Hildebrand, 0.; Opt. Commun. 10, 310 (1974).
Ulbrich, R.: Phys. Rev. Lett. 27, 1512 (1971).
K.L.; Leheny, R.F.; Nahory, R.E.: Journ. Of Luminescence 7, 284 1973 and references cited therein.
Göbel, E.: Appl. Phys. Lett., 24, 492 (1974).
Göbel, E.; Herzog, H.; Pilkuhn, M.H.; Zschauer, K.-H.: Solid State Commun. 13, 719 (1973).
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Hildebrand, O., Göbel, E. (1974). Investigation of Electron-Hole Plasmas in Pure GaAs by Excitation Spectroscopy with High Resolution. In: Pilkuhn, M.H. (eds) Proceedings of the Twelfth International Conference on the Physics of Semiconductors. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-322-94774-1_22
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DOI: https://doi.org/10.1007/978-3-322-94774-1_22
Publisher Name: Vieweg+Teubner Verlag, Wiesbaden
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Online ISBN: 978-3-322-94774-1
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