Skip to main content
SpringerLink
Log in
Book cover

Numerical Simulation in Science and Engineering pp 115–129Cite as

Process Simulation for the Semiconductor Industry

  • Chapter

  • 52 Accesses

Part of the book series: Notes on Numerical Fluid Mechanics (NNFM) ((NONUFM,volume 48))

Summary

A brief overview of approaches used and problems encountered in the simulation of the semiconductor fabrication process steps ion implantation, diffusion, oxidation, and layer deposition is given. Some recent improvements obtained at Erlangen in the development of physical models are described. Problems occuring for two- and especially for three-dimensional simulations are outlined. Their relationships to high-performance computing are sketched, and approaches for their solution are developed. Model and program requirements are discussed from the viewpoint of the requirements of industrial application. Furthermore, the importance of equipment simulation is discussed and an example for this strongly developing field is given.

This is a preview of subscription content, log in via an institution.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. J.P. Biersack, L.G. Haggmark, A Monte-Carlo Computer Program for the Transport of Energetic Ions in Amorphous Targets, Nucl. Instrum. Meth. 174. (1980) pp. 257.

    Article  Google Scholar 

  2. M.T. Robinson, I.M. Torrens, Computer Simulation of Atomic-displacement Cascades in Solids in the Binary-Collision Approximation, Phys. Rev. B9, (1974) pp. 5008.

    Google Scholar 

  3. I.R. Chakarov, R.P. Webb, Computer Simulation of B, P and As Channeling Profiles in Silicon, in: Proc. COSIRES 1992 (ed. J.P. Biersack), Berlin (1993).

    Google Scholar 

  4. H. Stippel, S. Selberherr, Three Dimensional Monte-Carlo Simulation of Ion Implantation with Octree Based Point Location, in: Proceedings of the 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD), Nara, Japan, (1993) pp. 122.

    Google Scholar 

  5. K.B. Winterbon, Ion Implantation in Inhomogeneous Materials, Appl. Phys. Lett. 31 10, (1977) pp. 649.

    Article  Google Scholar 

  6. J. Lorenz, W. Krüger, A. Barthel, Simulation of the lateral spread of implanted ions: theory, in: Proc. NASECODE VI (ed. J.J.H. Miller), Boole Press, Dublin, (1989) pp. 513.

    Google Scholar 

  7. W.K. Hofker, D.P. Oosthoek, N.J. Koeman. H.A.M. De Grefte, Concentration Profiles for Boron Implantations in Amorphous and Poly crystalline Silicon, Radiation Effects 24, (1975) pp. 223.

    Article  Google Scholar 

  8. F. Jahnel, H. Ryssel, G. Prinke, K. Hoffmann, K. Müller, J.P. Biersack, R. Henkelmann, Nucl. Instrum. Meth. 182/183, (1981) pp. 223.

    Article  Google Scholar 

  9. M. Kuhn, Analytische Modelle fur Implantationsverteilungen in Silicium, Diplomarbeit, Lehrstuhl für Elektronische Bauelemente, Universität Erlangen- Nürnberg, (1987).

    Google Scholar 

  10. A.F. Tasch, H. Shin, C. Park, An Improved Approach to Accurately Model Shallow B and BF2 Implants in Silicon, J. Electrochem. Soc. 136 (3), (1989) pp. 810.

    Article  Google Scholar 

  11. H. Ryssel, J. Lorenz, K. Hoffmann, Models for the Implantation into Multilayer Targets, Appl. Phys. A 41, (1986) pp. 201.

    Article  Google Scholar 

  12. R.J. Wierzbicki, J.P. Biersack, A. Barthel, J. Lorenz, H. Ryssel, Reflection Approach for the Analytical Description of Light Ions Implanted into Bilayer Structures, in: Proc. CQSIRES 1992 (ed. J.P. Biersack), Berlin (1993).

    Google Scholar 

  13. J. Lorenz, C. Hill, H. Jaouen, C. Lombardi, C. Lyden, K. de Meyer, J. Pelka, A. Poncet, M. Rudan, S. Solmi, The STORM Technology CAD System, in: Technology CAD Systems (eds. F. Fasching, S. Halama, S. Selberherr), Springer Verlag, Wien, New York, (1993) pp. 163.

    Chapter  Google Scholar 

  14. R.J. Wierzbicki, J. Lorenz, H. Ryssel, Advanced Analytical Models for the Multidimensional Simulation of Ion Implantation, to be published.

    Google Scholar 

  15. J. Lorenz, R.J. Wierzbicki, Efficient Multidimensional Simulation of Ion Implantation into Multilayer Structures, in: Proc. of the 1993 International Workshop on VLSI Process and Device Modeling (VPAD 1993), Nara, Japan, (1993) pp. 84.

    Google Scholar 

  16. J. Lorenz, F. Meyer, to be published.

    Google Scholar 

  17. M. Orlowski, Progress in Process Simulation for Submicron MOSFETs, in: Simulation of Semiconductor Devices and Processes Vol. 3 (eds. G. Bac- carani, M. Rudan), Tecnoprint, Bologna, (1989) pp. 393

    Google Scholar 

  18. R. Dürr, Beschreibung der Dualen Diffusion von Dotieratomen in Silicium für die Anwendung in der Prozefisimulation, Dissert ationsschrift, Universität Erlangen-Nürnberg (1991).

    Google Scholar 

  19. K. Maser, Dotandendiffusion und -drift im Silizium mit inhomogen verteilten Vakanzen, Experimentelle Technik der Physik 34, (1986) pp. 213.

    Google Scholar 

  20. M. Orlowski, Unified Model for Impurity Diffusion in Silicon, Appl. Phys. Lett. 53, (1988) 1323.

    Article  Google Scholar 

  21. S. List, P. Pichler, H. Ryssel, Atomistic Evaluation of Diffusion Theories for the Diffusion of Dopants in Vacancy Gradients, in: Simulation of Semiconductor Devices and Processes Vol. 5 (eds. S. Selberherr, H. Stippel, E. Strasser), Springer Verlag, Wien, New York, (1993) pp.97.

    Chapter  Google Scholar 

  22. P. Pichler, Direct Experimental Evidence for Diffusion of Dopants via Pairs with Intrinsic Point Defects, Appl. Phys. Lett. 60 (8), (1992) 953.

    Article  Google Scholar 

  23. A.F. Franz, G.A. Franz, S. Selberherr, C. Ringhofer, P. Markovich, Finite Boxes — A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation, IEEE Trans. El. Dev. ED 30 (9), (1982) pp. 1070.

    Article  Google Scholar 

  24. P. Conti, Grid Generation for Three-dimensional Semiconductor Device Simulation, in: Series in Microelectronics Vol. 12 (eds. W. Fichtner, W. Guggenbühl, H. Melchior, G.S. Moschytz), Hartung-Gorre-Verlag, Konstanz, (1991).

    Google Scholar 

  25. H. Wille, E. Burte, H. Ryssel, Simulation of the Step Coverage for Chemical Vapor Deposited Silicon Dioxide, J. Appl. Phys. 71, (1992) pp. 3532.

    Article  Google Scholar 

  26. J. Lorenz, C. Hill, H. Jaouen, C. Lombardi, C. Lyden, K. de Meyer, J. Pelka, A. Poncet, M. Rudan, S. Solmi, The STORM Technology CAD System, in: Technology CAD Systems (eds. F. Fasching, S. Halama, S. Selberherr), Springer Verlag, Wien (1993) pp. 163.

    Chapter  Google Scholar 

  27. H. Wille. E.P. Burte, A Dual Sticking Coefficient Chemical Vapor Deposition Model, in: Proc. ESSDERC 92 (eds. H.E. Maes, R.P. Mertens, R.J. Van Overstraeten), Elsevier, Amsterdam, (1992) pp. 503.

    Google Scholar 

  28. W.H. Mills, High Temperature Furnace Simulation with Surface to Surface Radiation, PHOENICS Journal of Computational Fluid Dynamics 4 (4), (1991) pp. 389.

    Google Scholar 

  29. F. Durst, L. Kadinski, M. Peric, M. Schafer, Numerical Study of Transport Phenomena in MOCVD Reactors Using a Finite Volume Multigrid Solver, J. Cryst. Growth 125, (1992) pp. 612.

    Article  Google Scholar 

  30. Yu.N. Makarov, E.V. Subashieva, A.N. Zabolotskikh, A.I. Zhmakin, Numerical Simulation of Flow and Heat Transfer in Epitaxial reactors, in: Numerical Methods in Thermal Problems VIII (ed. R.W. Lewis), Pineridge Press, (1993) pp. 1298.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Bayerischer Forschungsverbund für Technisch-Wissenschaftliches Hochleistungsrechnen, Germany

    J. Lorenz, F. Durst & H. Ryssel

  2. Bereich Bauelementetechnologie, Fraunhofer-Institut für Integrierte Schaltungen, Schottkystrasse 10, D-91058, Erlangen, Germany

    J. Lorenz & H. Ryssel

  3. Lehrstuhl für Strötmungsmechanik, Universität Erlangen-Nürnberg, Cauerstrasse 4, D-91058, Erlangen, Germany

    F. Durst

  4. Lehrstuhl für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Cauerstrasse 6, D-91058, Erlangen, Germany

    H. Ryssel

Authors
  1. J. Lorenz
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. F. Durst
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Ryssel
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Michael Griebel Christoph Zenger

Rights and permissions

Reprints and permissions

Copyright information

© 1994 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH, Braunschweig/Wiesbaden

About this chapter

Cite this chapter

Lorenz, J., Durst, F., Ryssel, H. (1994). Process Simulation for the Semiconductor Industry. In: Griebel, M., Zenger, C. (eds) Numerical Simulation in Science and Engineering. Notes on Numerical Fluid Mechanics (NNFM), vol 48. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-322-89727-5_10

Download citation

  • DOI: https://doi.org/10.1007/978-3-322-89727-5_10

  • Publisher Name: Vieweg+Teubner Verlag, Wiesbaden

  • Print ISBN: 978-3-528-07648-1

  • Online ISBN: 978-3-322-89727-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation