Abstract
In the field of digital memories, semiconductors have become more and more important besides magnetics, although they have not been able to completely replace the latter so far. They received a particular stimulus in the wake of microprocessor systems which attracted considerable interest during the last few years. Microcomputers are a main application field for the most important types of semiconductor memories as shown in Table 1. Fundamentally two groups of memories have to be distinguished, namely read-write memories (RWMs), most of them random-access memories (RAMs),
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References
[1] Electron beam lithography
Livesay, W. R., Electron beam lithography Sol. St. Technol. 17, (1974), No. 6, p. 37–42; No. 7, p. 21-26
Thompson, F. L., Electron beam lithography Sol. St. Technol. 17, (1974), No. 7, p. 27–30, 40; No. 8, p. 41-46 Funk-Techn. 31 (1976), No. 3, p. 64-69 Electronics/Dec. 23, 1976, p. 6E, 8E
[2] X-ray lithography
Spears, D. L., Smith, H. I., X-ray lithography Sol. St. Technol. 15 (1972), No. 7, p. 21–26
Spears, D. L., Smith, H. I., X-ray lithography Electron. Lett. 8 (1972), p. 102–104
Bassous, E., Feder, R., Spiller, E., Topalian, J., X-ray lithography Sol. St. Technol. 19, (1976), No. 9, p. 55–58.
McCoy, J. H., Sullivan, P. A., X-ray lithography Sol. St. Technol. 19, (1976), No. 9, p. 59–64
Spiller, E., Eastman, D. E., Feder, R., Grobman, W. D., Topalian, J., X-ray lithography J. Appl. Phys. 47 (1976), p. 5450–5459
[3] Ion implantation
Eckstein, D., Ion implantation VALVO-Ber. XVIII (1974), No. 1/2, p. 227–234
Lee, D. H., Mayer, J. W., Ion implantation Proc. IEEE 62 (1974), p. 1241–1255 (numerous references)
Brown, W. L., MacRae, A U., Ion implantation Bell Lab. Rec. 53 (1975), p. 388–394
Krimmel, E. F., Ion implantation Elektro-Anz. 28, (1975), p. 251–253
Stone, J. L., Plunkett, J. C., Ion implantation Sol. St. Technol. 19 (1976), No. 6, p. 35–44
Sansbury, J., Ion implantation Sol. St. Technol. 19 (1976), No. 11, p. 31–37, 43.
[4] Collector diffusion isolation
Polke, H., Oestreich, P., Collector diffusion isolation Elektronik 1972, No. 1, p. 29–30
Grundy, D. L., Bruchez, J., Down, B., Collector diffusion isolation Electronics/July 3, 1972, p. 96–104
Bruchze, J., Collector diffusion isolation Microelectronics 5 (1974), No. 4, p. 45–54
[5] GIMIC
GIMIC Electronic Design 6 (1973), March 15, p. 68–70
[6] V-ATE
Rodgers, T. J., Meindl, J. D., V-ATE IEEE Trans. Electron Dev. ED-20 (1973), p. 226–232
Declercq, M. J., De Moor, J. P., Jespers, P. G., Sevrin, A. M., V-ATE Electron. Lett 12 (1976), p. 150–151
Fields, St. W., V-ATE Electronics/July 3, 1972, p. 65–66
[7] Polyplanar, VIP
Sanders, T. J., Morcom, W. R., Polyplanar, VIP Electronics/April 12, 1973, p. 117–120 (Polypi.), Electronics/July 3, 1972, p. 39, 41 and p. 65-66 (Fields, St. W.) (VIP)
[8] Anodic oxidation of silicon
Cook, B., Anodic oxidation of silicon Electronics/Nov. 13, 1975, p. 109–113
[9] General review of dielectric isolation techniques
Bosnell, J. R., General review of dielectric isolation techniques Microelectron. & Reliab. 15 (1976), p. 113–122
Peltzer, D., Herndon, B., Isoplanar technique Electronics/March 1, 1971, p. 53–55
Appels, J. A., Kooi, E., Paffen, M. M., Schatorjé, J. J. H., Verkuylen, W. H. C. G., LOCOS Phil. Res. Rep. 25 (1970), p. 118–132
Kooi, E., Van Lierop, J. G., Appels, J. A., LOCOS J. Electrochem. Soc. 123 (1976), p. 1117–1120
Morandi, F., Bladowski, R., Planox Int. Elektron. Rdsch. 25 (1971), p. 280–293
Evans, W.J., Tretola, A. R., Payne, R. S., Olmstead, M. L., Speeney, D. V., OXIM (Oxide Isolated Monolith) IEEE J. Sol. St. Circ. SC-8 (1973), p. 373–380
Baker, W. D., Herndon, W. H., Longo, T. A., Pelzer, D. L., Isoplanar-II-technique Electronics/March 29, 1973, p. 65–70
[10] OXIS
Schwabe, U., Rathbone, R., Murrmann, H., OXIS Electrochem. Soc. Spring Meet. 1975
[11] ESFI technology
Schlötterer, H., ESFI technology J. Vac. Sci. & Technol. 13 (1976), p. 29–36
Druminski, M., Kühl, Ch., ESFI technology Siemens F.-u. Entw.-Ber. 5 (1976), p. 139–145
Druminski, M., Kühl, Ch., Preuss, E., Schwidefsky, F., Splittgerber, H., Takacs, D., ESFI technology Proc. 7th Conf. Sol. St. Dev. Tokyo 1975, p. 217–220
Ronen, R. S., Splinter, M. R., Tremain, R. E., ESFI technology IEEE J. Sol. St. Cire. SC-11 (1976), p. 431–442
[12] CMOS memories
Goser, K., CMOS memories Nachr.-techn. Z. 26. Jg. (1973), p. 9–15
Hume, S., CMOS memories Electronics/July 24, 1975, p. 102–106
[13] ESFI-MOS memories
Goser, K., Pomper, M., ESFI-MOS memories IEEE J. Sol. St. Circ. SC-8 (1973), p. 324–326
Goser, K., Pomper, M., Tihanyi, J., ESFI-MOS memories IEEE J. Sol. St. Circ. SC-9 (1974), p. 234–238
Pomper, M., Horninger, K. H., Tihanyi, J., Goser, K., ESFI-MOS memories L’Onde électr. 54 (1974), p. 187–191
Goser, K., Pomper, M., ESFI-MOS memories Siemens F.-u. Entw.-Ber. 4 (1975), p. 220–225
[14] CMOS-Isoplanar, LOCMOS
Brandt, B. B. M., Steinmeier, W., Strachan, A. J., CMOS-Isoplanar, LOCMOS Phil. Techn. Rdsch. 33 (1973), No. 11, p. 343–347 or L’Onde électr. 54 (1974), No. 1, p. 27-30 VALVO brief (10.10.1975)
[15] Silicon gate technology
Stein, K U., Friedrich, H., Silicon gate technology IEEE J. Sol. St. Circ. SC-8 (1973), p. 319–323
Wotruba, G., Silicon gate technology Siemens F.-u. Entw.-Ber. 4 (1975), p. 207–212
[16] V-MOS
Holmes, F. E., Salama, C. A. T., V-MOS Sol. St. Electronics 17 (1974), p. 791–797
Rodgers, T J., Hiltpold, W. R., Zimmer, G., Marr, G., Trotter, J. D., V-MOS ISSCC-Dig. Tech. Pap. 1976, p. 60, 61, 232 (V-MOS-ROM)
Rodgers, T. J., Hiltpold, W. R., Zimmer, G., Marr, G., Trotter, J. D., V-MOS IEEE J. Sol. St. Circ. SC-11 (1976), No. 5, p. 614–622
Rodgers, T J., Jenne, F. B., Frederick, B., Barnes, J. J., Hiltpold, W. R., Trotter, J. D., V-MOS ISSCC-Dig. Techn. Pap. (1977), p. 74, 75, 239
Rodgers, T. J., Asai, S., Pocha, M. D., Button, R. W., Meindl, J. D., D-MOS IEEE J. Sol. St. Circ. SC-10 (1975), p. 322–331
Lin, H. C., Halsor, J. L., Benz, H. F., D-MOS IEEE J. Sol. St. Circ. SC-11 (1976), p. 443–452
Masuhara, T., Muller, R. S., D-MOS IEEE J. Sol. St. Circ. SC-11 (1976), p. 453–458
Yu, S Y., Ou-Yang, P., D-MOS Electron. Lett. 12 (1976), p. 605 (VDMOS)
Shimotori, K., Anami, K., Nagayama, Y., Ohkura, I., Ohmori, M., Nakano, T., D-MOS ISSCC-Dig. Techn. Pap. (1977), p. 76, 77, 240
[17] I2L = MTL
Harth, C M., Slob, A., I 2 L = MTL Phil. Techn. Rdsch. 33 (1973/74), No. 3, p. 82–91
Berger, H. H., Wiedmann, S. K., I 2 L = MTL Electronics/Sept. 4, 1975, p. 89–95; Oct. 2, 1975, p. 99-103
Berger, H. H., Wiedmann, S. K., I 2 L = MTL IEEE J. Sol. St. Circ. SC-9 (1974), p. 206–227
Mulder, C., Wulms, H. E., I 2 L = MTL IEEE J. Sol. St. Circ. SC-11 (1976), p. 379–385
Armstrong, L., Altman, L., I 2 L = MTL Electronics/March 18, 1976, p. 80. 82
Hewlett, F. W., Jr., Schottky-I 2L IEEE J. Sol. St. Circ. SC-10 (1975), p. 343–348
Berger, H. H., Wiedmann, S. K., Schottky-I 2L ISSCC-Dig. Techn. Pap. 1975, p. 172
Blatt, V., Walsh, Ph. S., Kennedy, L. W., Substrate Fed Logic (SFL) IEEE J. Sol. St. Circ. SC-10 (1975), p. 336–342
Lehning, H., Current Hogging Logic (CHL) IEEE J. Sol. St. Circ. SC-9 (1974), p. 228–233
Müller, R., Current Hogging Injection Logic (CHIL) IEEE J. Sol. St. Circ. SC-10 (1975), p. 348–352
Tomisawa, O., Horiba, Y., Kato, S., Murakami, K., Yasuoka, A., Nakano, T., Vertical Injection Logic (VIL) IEEE J. Sol. St. Circ. SC-11 (1976), No. 5, p. 637–643
[18] I2L-RAMs
Wiedmann, S. K., Berger, H. H., I 2 L-RAMs Electronics/Feb. 14, 1972, p. 83–86
Wiedmann, S. K., I 2 L-RAMs IEEE J. Sol. St. Circ. SC-8 (1973), p. 332–337
[19] I3L-RAMs
Sander, W. B., Early, J. M., I 3 L-RAMs ISSCC-Dig. Techn. Pap. 1976, p. 182–183
Sander, W. B., Shepherd, W. H., Schinelle, R. D., I 3 L-RAMs Electronics/August 19, 1976, p. 99–102
[20] Charge transfer devices
Songster, F. L. J., Teer, K., Charge transfer devices IEEE J. Sol. St. Circ. SC-4 (1969), p. 131–136 (BBD)
Boyle, W. S., Smith, G. E., Charge transfer devices B.S.T.J. 49 (1970), p. 587–593 (CCD)
Séquin, C. H., Tompsett, M. F., Charge transfer devices Charge Transfer Devices. Acad. Press, New York, San Francisco, London 1975 (a comprehensive review with numerous references) Several authors, IEEE J. Sol. St. Circ. SC-11 (1976), p. 4-58
Ablaβmeier, U., Doering, E., Charge transfer devices Siemens F.-u. Entw.-Ber. 4 (1975), p. 226–230
Harloff, H. J., Charge transfer devices this issue, p. 147
[21] CC-RAM
Tasch, A.F., Frye, R. C., Fu, H.-S., CC-RAM IEEE Trans. Electron Dev. ED-23 (1976), p. 126–131
Tasch, A. F., Fu, H.-S., Holloway, T. C., Frye, R. E., CC-RAM IEEE J. Sol. St. Circ. SC-11 (1976), No. 5, p. 575–585
[22] CCD-RAM
Baker, R. T., CCD-RAM Electronics/Nov. 13, 1975, p. 138–139
[23] Merged Charge Memory
Lee, H. S., Pricer, W. D., Merged Charge Memory IEDM-Techn. Dig. (1976), p. 15–17 (see also Electronics/Nov. 25, 1976, p. 42-43)
[24] C3-RAM
Hoffmann, K., C 3 -RAM ISSCC-Dig. Techn. Pap., 1976, p. 130–131
Hoffmann, K., C 3 -RAM IEEE J. Sol. St. Circ. SC-11 (1976), No. 5, p. 591–596
[25] Nonvolatile memories
Chang, J. J., Nonvolatile memories Proc. IEEE 64 (1976), No. 7, p. 1039–1059 (general review)
[26] Amorphous Semiconductors
Tanaka, K., Okada, Y., Sugi, M., Iizima, S., Kikuchi, M., Amorphous Semiconductors J. Non-Cryst. Sol. (NL) 12 (1973), No. l, p. 100–114
Van Roosbroeck, W., Amorphous Semiconductors J. Non-Cryst. Sol. (NL) 12 (1973), No. 2, p. 232–262
Baran, N. Yu., Dovgoshei, N. I., Amorphous Semiconductors Sov. Phys. Semicond. 9 (1975), p. 1167–1168
Weiser, K., Amorphous Semiconductors Prog. Sol. St. Chem. (GB) 11 (1976), p. 403–445
Suntola, T., Amorphous Semiconductors Thin Sol. Films 34, No. 1 (May 1976), p. 9–16.
Thornburg, D. D., Amorphous Semiconductors Thin Sol. Films 45 (1977), p. 95–105
[27] FAMOS memories
Frohman-Bentchkowsky, D., FAMOS memories Sol. St. Electron. 17 (1974), p. 517–529
Card, H. C, Heasell, E. L., FAMOS memories Sol. St. Electron. 19 (1976), p. 965–968
[28] Other floating-gate transistor structures
Iizuka, H., Masuoka, F., Sato, T., Ishikawa, M., SAMOS IEEE Trans. Electron Dev. ED-23 (1976), p. 379–387
Rössler, B., Müller, R. G., SIMOS Siemens F.-u. Entwo.-Ber. 4 (1975), p. 345–351
Verwey, J. F, Kramer, R. P., ATMOS IEEE Trans Electron. Dev. ED-21 (1974), p. 631–636
Tarui, Y., Hayashi, Y., Nagai, K., IEEE J. Sol. St. Circ. SC-7 (1972), p. 369–375
Card, H. C., Worall, A. G., J. Appl. Phys. 44 (1973), p. 2316–2330
Kikuchi, M., Ohya, S., Kamaya, M., Koike, M., Yamamoto, H., First Europ. Sol. St. Circ. Conf. (ESSCIRC) 1975, p. 66
Rai, Y., Sasami, T., Hasegawa, Y., IEE (Japan) 111 (March 1976), p. 26–31 (MNMOS) Müller, R. G., this issue, p. 189
Kelley, W., Millet, D. F., Electronics/Dec. 9, 1976, p. 101–104
[29] DIFMOS
Gosney, W. M., DIFMOS IEEE Trans. Electron Dev. ED-24 (1977), No. 5, p. 594–599
Gosney, W. M., DIFMOS El. et Microél. Ind. 228 (15-11-1976), p. 20–21
[30] MAOS memory
Balk, P., Stephany, F., MAOS memory J. Electrochem. Soc. 118 (1971), p. 1634–1638
Balk, P., MAOS memory Solid State Devices 1973 (3rd Europ. Sol. St. Dev. Conf.). The Inst, of Physics London Bristol, p. 51–82
Balk, P., MAOS memory J. Electron. Mat. 4 (1975), p. 635–661
Gnadinger, A. P., Rosenzweig, W., MAOS memory J. Electrochem. Soc. 121 (1974), p. 700–705
[31] MNOS memory
Frohman-Bentchkowsky, D., MNOS memory Proc. IEEE 58 (1970), p. 1207–1219
Balk, P., MAOS memory (1973,1975)
Hominger, K. H., MNOS memory Bull. Schweizer. Eletrotechn. Ver. 64 (1973), p. 1258–1263
Horninger, K. H., MNOS memory Siemens F.-u. Entw.-Ber. 4 (1975), p. 213–219
Uchida, Y., Endo, N., Saito, Sh., Konaka, M., Nojima, I., Nishi, Y., Tamara, K., MNOS memory ISSCC-Dig. Techn. Pap., 1975, p. 108, 109, 220
Lodi, R. J., Wegener, H. A. R., Kosicki, B. B., Borovicka, M., Moberg, W. L., Newman, R., MNOS memory ISSCC-Dig. Techn. Pap., 1976, p. 62, 63, 233
Lodi, R. J., Wegener, H. A. R., Borovicka, M., Pogemiller, T. A., Eklund, M. W., MNOS memory IEEE J. Sol. St. Circ. SC-11 (1976), No. 5, p. 622–630
Kirschner, N., MNOS memory Siemens F.-u. Entw.-Ber. 5 (1976), p. 179–182
Card, H. C., Elmasry, M. I., MNOS memory Sol. St. Electron. 19 (1976), p. 863–870
Raffel, J. I., Yasaitis, J. A., MNOS memory Proc. IEEE, Nov. 1976, p. 1629, 1630 and ISSCC-Dig. Techn. Pap. (1977), p. 192, 193, 251
[32] Tunneling mechanisms in MNOS structures
Gordon, N., Johnson, W. C., Tunneling mechanisms in MNOS structures IEEE Trans. Electron Dev. ED-20 (1973), p. 253–256
Ross, E. C., Wallmark, J. T., Tunneling mechanisms in MNOS structures RCA Rev. 30 (1969), p. 366–381
[33] ESFI-MNOS memories
Horninger, K. H., ESFI-MNOS memories IEEE J. Sol. St. Circ. SC-9 (1974), p. 444–446
[34] Doped DDCs
Kahng, D., Sundburg, W. J., Boulin, D.M., Ligenza, J. R., Doped DDCs B.S.T.J. 53 (1974), p. 1723–1739
Thornber, K. K., Kahng, D., Neppell, C. T., Doped DDCs B.S.T.J. 53 (1974), p. 1741–1770
Kasprzak, L. A., Laibowitz, R. B., Ohring, M., Doped DDCs Electrochem. Soc. Fall Meet. 1975 (Ext. abstr.), p. 316–317
Vitanov, P. K., Popova, L. I., Antov, B. Z., Doped DDCs Electron. Lett. 12 (1976), p. 681
[35] CCD combined with MNOS
Chan, Y. T., French, B. T., Gudmundsen, R. A., CCD combined with MNOS Appl. Phys. Lett. 22 (1973), p. 650–652
Goser, K., Knauer, K., CCD combined with MNOS IEEE J. Sol. St. Circ. SC-9 (1974), p. 148–150
White, M. H., Lampe, D. R., Fagan, J. L., Kub, F. J., Barth, D. A., CCD combined with MNOS IEEE J. Sol. St. Circ. SC-10 (1975), p. 281–287
Fagan, J. L., White, M. H., Lampe, D. R., CCD combined with MNOS ISSCC-Dig. Techn. Pap. 1976, p. 184–185
Fagan, J. L., White, M. H., Lampe, D. R., CCD combined with MNOS IEEE J. Sol. St. Circ. SC-11 (1976), No. 5, p. 631–636
[36] PLA containing MNOS transistors
Horninger, K. H., PLA containing MNOS transistors IEEE J. Sol. St. Circ. SC-10 (1975), p. 331–336
[37] Ferroelectric memory
Wu, S. Y., Ferroelectric memory IEEE Trans. Electron Dev. ED-21 (1974), p. 499–504
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Moeller, A. (1978). Fabrication Technology and Physical Fundamentals of Components Used for Semiconductor Memories. In: Proebster, W.E. (eds) Digital Memory and Storage. Vieweg+Teubner Verlag. https://doi.org/10.1007/978-3-322-83629-8_6
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