Abstract
BEAMOS — Beam Accessable MOS — is the best known synonym for recent developments in the field of electronic beam memories.
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References
K. Schlesinger, “Progress in the Development of Post-Acceleration and Electrostatic Deflection”, Proceedings of the IRE, May 1956, pp. 655–667.
C. Q. Lemmond, et al., “Electron Fly’s Eye Artwork Camera”, IEEE Transactions of Electron Devices, Vol. ED-21, No. 9, Sept. 1974, pp. 598–603.
W. C Hughes, et al., “BEAMOS — A new electronic digital memory”, NCC 1975, pp. 541–548.
D. E. Speliotis, “Bridging the memory access gap”, NCC 1975, pp. 501–508.
M. S. Cohen and J. S. Moore, “Physics of the MOS electron-beam-memory”, Journal of Applied Physics, Vol. 45, No. 12, Dec. 1974, pp. 5335–5348.
J. Kelly, “The Development of an Experimental Electron-Beam-Addressed Memory Module”, Computer, Febr. 1975, pp. 32–42.
C. Schünemann and W. G. Spruth, “Technology and Structure of Storage Hierarchy”, This issue, p.… — …
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© 1978 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH, Braunschweig
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Schünemann, C. (1978). BEAMOS — Technology and Applications. In: Proebster, W.E. (eds) Digital Memory and Storage. Vieweg+Teubner Verlag. https://doi.org/10.1007/978-3-322-83629-8_12
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DOI: https://doi.org/10.1007/978-3-322-83629-8_12
Publisher Name: Vieweg+Teubner Verlag
Print ISBN: 978-3-528-08409-7
Online ISBN: 978-3-322-83629-8
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