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Al-Rich III-Nitride Materials and Ultraviolet Light-Emitting Diodes

  • Chapter
Light-Emitting Diodes

Part of the book series: Solid State Lighting Technology and Application Series ((SSLTA,volume 4))

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Abstract

Aluminum nitride (AlN) material is commonly used as a crucial template for the growth of high-quality Al-rich III-nitride materials and high-performance deep-ultraviolet light-emitting diodes (DUV LEDs). In this chapter, the heteroepitaxy of AlN film by MOVPE and the development of AlN epitaxy techniques on sapphire substrates are discussed. The structural design for efficient DUV LEDs is then introduced. Since bulk AlN substrates are a perfect candidate for AlGaN-based DUV LEDs due to similar thermal expansion coefficients and relatively small lattice mismatches, we also discussed AlN homoepitaxy, pseudomorphic AlGaN, and DUV LEDs on AlN substrates. The limited light extraction efficiency (LEE) is another obstacle for power DUV LEDs and their applications. The intrinsic Al-rich-induced optical polarization effect and related methods for improving the LEE are presented.

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Acknowledgments

The author acknowledges contributions of Qingqing Wu and Jiankun Yang for AlN material growth, Lili Sun for structural design for efficient DUV LEDs, and Yanan Guo for the light exaction issues.

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Authors and Affiliations

  1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Jianchang Yan & Junxi Wang

  2. State Key Laboratory of Solid State Lighting, Beijing, China

    Jianchang Yan & Junxi Wang

  3. Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing, China

    Jianchang Yan & Junxi Wang

  4. Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Solid State Lighting R&D Center, Beijing, China

    Jinmin Li

  5. Zhengzhou University, Zhengzhou, China

    Yuhuai Liu

  6. Nagoya University, Nagoya, Japan

    Yuhuai Liu

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  1. Jianchang Yan
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  2. Junxi Wang
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  3. Yuhuai Liu
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  4. Jinmin Li
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Corresponding author

Correspondence to Junxi Wang .

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Editors and Affiliations

  1. Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Solid State Lighting R&D Center, Beijing, China

    Jinmin Li

  2. Delft University of Technology, DELFT, Noord-Brabant, The Netherlands

    G. Q. Zhang

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Yan, J., Wang, J., Liu, Y., Li, J. (2019). Al-Rich III-Nitride Materials and Ultraviolet Light-Emitting Diodes. In: Li, J., Zhang, G.Q. (eds) Light-Emitting Diodes. Solid State Lighting Technology and Application Series, vol 4. Springer, Cham. https://doi.org/10.1007/978-3-319-99211-2_7

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  • DOI: https://doi.org/10.1007/978-3-319-99211-2_7

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