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The AlGaInP/AlGaAs Material System and Red/Yellow LED

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Light-Emitting Diodes

Part of the book series: Solid State Lighting Technology and Application Series ((SSLTA,volume 4))

Abstract

In this chapter, AlGaInP and AlGaAs alloy compound semiconductor system was reviewed for solid-state lighting application, including their lattice and bandgap structure, heterojunction, and quantum well properties. LEDs based on AlGaInP quantum well and GaAs substrate operating in the red, orange, and yellow visible spectrum were discussed including the major classes of AlGaInP device structures, such as GaP-absorbing substrate LEDs enhanced by distributed Bragg reflectors (DBRs), transparent-substrate LEDs (TS-LEDs), thin-film LEDs (TF-LEDs), and GaP window/current-spreading layer. AlGaInP/AlGaAs material MOCVD epitaxy and LED chip processing technology were introduced briefly.

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Authors and Affiliations

  1. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Guohong Wang, Xiaoyan Yi, Teng Zhan & Yang Huang

  2. State Key Laboratory of Solid State Lighting, Beijing, China

    Guohong Wang, Xiaoyan Yi, Teng Zhan & Yang Huang

  3. Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing, China

    Guohong Wang, Xiaoyan Yi, Teng Zhan & Yang Huang

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  1. Guohong Wang
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  2. Xiaoyan Yi
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  3. Teng Zhan
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  4. Yang Huang
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Correspondence to Guohong Wang .

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Editors and Affiliations

  1. Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Solid State Lighting R&D Center, Beijing, China

    Jinmin Li

  2. Delft University of Technology, DELFT, Noord-Brabant, The Netherlands

    G. Q. Zhang

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Wang, G., Yi, X., Zhan, T., Huang, Y. (2019). The AlGaInP/AlGaAs Material System and Red/Yellow LED. In: Li, J., Zhang, G.Q. (eds) Light-Emitting Diodes. Solid State Lighting Technology and Application Series, vol 4. Springer, Cham. https://doi.org/10.1007/978-3-319-99211-2_5

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  • DOI: https://doi.org/10.1007/978-3-319-99211-2_5

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