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Reliability of Ultraviolet Light-Emitting Diodes

  • Chapter
Light-Emitting Diodes

Part of the book series: Solid State Lighting Technology and Application Series ((SSLTA,volume 4))

Abstract

This chapter presents an extensive review of the literature on the degradation processes of GaN-based UV-A, UV-B, and UV-C LEDs. For the state-of-the-art devices, the main open issue is the increase in Shockley–Read–Hall non-radiative recombination inside the quantum well, originating from local generation of defects or from diffusion processes of dopant atoms or foreign impurities. Temperature acts as a significant acceleration factor, especially in lower wavelength devices, affected by a higher turn-on voltage. Changes in the chemical structure of the package and of the encapsulant, induced by the high energy of the photons, may lead to a lower reflectivity and transmittance, thus limiting the overall reliability of the devices.

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Authors and Affiliations

  1. Department of Information Engineering, University of Padova, Padova, Italy

    Carlo De Santi, Desiree Monti, Pradip Dalapati, Matteo Meneghini, Gaudenzio Meneghesso & Enrico Zanoni

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  2. Desiree Monti
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Correspondence to Carlo De Santi .

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  1. Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Solid State Lighting R&D Center, Beijing, China

    Jinmin Li

  2. Delft University of Technology, DELFT, Noord-Brabant, The Netherlands

    G. Q. Zhang

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De Santi, C., Monti, D., Dalapati, P., Meneghini, M., Meneghesso, G., Zanoni, E. (2019). Reliability of Ultraviolet Light-Emitting Diodes. In: Li, J., Zhang, G.Q. (eds) Light-Emitting Diodes. Solid State Lighting Technology and Application Series, vol 4. Springer, Cham. https://doi.org/10.1007/978-3-319-99211-2_11

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