Abstract
Transition metal dichalcogenides (TMDs) are layered materials with strong in-plane and weak out-of-plane interactions enabling exfoliation into two-dimensional thin sheets. Although TMDs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDs in nanoelectronics and optoelectronics. Our present work focuses on optimizing the concentration of MoS2 to produce atomically thin nanosheets using Liquid Phase Exfoliation. The resultant dispersions were analyzed by absorption, photoluminescence spectroscopy and Raman spectroscopy. A significant light emission was observed.
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Acknowledgements
Vineeta is thankful to UGC for the award of a Junior Research Fellowship.
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Vineeta, Rath, S. (2019). Optimization of the Concentration of Molybdenum Disulfide (MoS2) for Formation of Atomically Thin Layers. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_7
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DOI: https://doi.org/10.1007/978-3-319-97604-4_7
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