Abstract
In this paper, the effect of back gate voltage on drain current in a double gate single layer graphene field effect transistor is shown through a developed mathematical model. Through this structure and employing high dielectric constant material (HfO2) as top gate dielectric, result has been improved in terms of ION/IOFF ratio. This device structure is showing further increase in ON current on application of high back gate voltage. This projected mathematical model is valid for both electron and hole conduction to show the effect of back gate voltage on drain current, whereas in this literature high ION/IOFF ratio and high ION have been obtained for hole conduction.
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References
K.S. Novoselov, V.I. Fa’lco, L. Colombo, P.R. Gellert, M.G. Schwab, K. Kim, A roadmap for graphene. Nature 490(7419), 192–200 (2012)
A.K. Geim, K.S. Novoselov, Rise of graphene. Nat Mater. 6(3), 183–191 (2007)
F. Schwierz, Graphene transistors. Nat. Nanotechnol. 5(7), 487–496 (2010)
F. Schvierz, Graphene transistors: status, prospects, and problems. IEEE Electron Device Lett. 101(7), 0018–9219 (2013)
B.-C. Huang, M. Zhang, Y. Wang, J. Woo, Contact resistance in top gated graphene field effect transistor. Appl. Phys. Lett. 99(3), 032107 (2011)
H. Zhong, Z. Zhang, B. Chen, H. Xu, D. Yu, L.-M. Peng, Realization of low contact resistance close to theoretical limit in graphene transistors. Nano Res. 8(5), 1669–1679 (2014)
F. Xia, D.B. Farmer, Y. Lin, P. Avouris, Graphene field effect transistors with high on/off current ratio and large transport bandgap at room temperature. Nano Lett. 10, 715–718 (2010)
S.A. Thiele, J.A. Schaefer, F. Schwierz, Modeling of graphene metal oxide semiconductor field effect transistors with gapless large area graphene channels. J. Appl. Phys. 107(9), 094505 (2010)
Ime J. Umoh, T.J. Kazmierski, B.M. Al-Hashimi, A dual-gate graphene FET model for circuit simulation-SPICE implementation. IEEE Nanotechnol. 12(3), 427–435 (2013)
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Shukla, G., Upadhyay, A., Vishvakarma, S.K. (2019). Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_4
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DOI: https://doi.org/10.1007/978-3-319-97604-4_4
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