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Trapping Phenomenon in AlInN/GaN HEMTs: A Study Based on Drain Current Transient Spectroscopy

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The Physics of Semiconductor Devices (IWPSD 2017)

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 215))

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Abstract

In this paper, we have investigated the trapping phenomenon in AlInN/GaN HEMTs using the drain current transient spectroscopy. From the trapping and detrapping drain current transient analysis under different biasing conditions, energy levels and locations of associated traps are extracted. Surface traps with activation energy of ~0.18 eV and buffer traps of energy ~0.27 eV were identified from this analysis. Hopping conduction of trapped surface electrons are also identified from this study.

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References

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Author information

Authors and Affiliations

  1. Microelectronics and MEMS Laboratory, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, 600036, India

    Ayush Khandelwal, Gourab Dutta, Amitava DasGupta & Nandita DasGupta

Authors
  1. Ayush Khandelwal
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  2. Gourab Dutta
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  3. Amitava DasGupta
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  4. Nandita DasGupta
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Corresponding author

Correspondence to Ayush Khandelwal .

Editor information

Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Khandelwal, A., Dutta, G., DasGupta, A., DasGupta, N. (2019). Trapping Phenomenon in AlInN/GaN HEMTs: A Study Based on Drain Current Transient Spectroscopy. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_33

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