Effect of Surface Treatments on the Evolution of Microstructures in GaN Thin Films and GaN/AlGaN/GaN Heterostructures
In this study the effect of hot phosphoric acid treatment on the evolution of microstructures in plasma assisted molecular beam epitaxy grown GaN thin films and GaN/AlGaN/GaN heterostructures is investigated. The surface morphology of the as grown samples and chemically treated samples is studied using field emission scanning electron microscopy which reveal the formation of different geometrical microstructures namely dodecagonal pyramids in one sample and hexagonal pits in the other after chemical treatment due to the different polar nature of GaN in both the samples.
Mansi Agrawal thanks Solid State Physics laboratory for the research funding. We also acknowledge the support of GaN MBE group and Characterization group at SSPL.
- 1.O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85(6), 3222–3233 (1999)ADSCrossRefGoogle Scholar
- 6.R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J.R. Shealy, L.F. Eastman, O. Ambacher, M. Stutzmann, Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire. J. Appl. Phys. 87(7), 3375–3380 (2000)ADSCrossRefGoogle Scholar