Abstract
In this study the effect of hot phosphoric acid treatment on the evolution of microstructures in plasma assisted molecular beam epitaxy grown GaN thin films and GaN/AlGaN/GaN heterostructures is investigated. The surface morphology of the as grown samples and chemically treated samples is studied using field emission scanning electron microscopy which reveal the formation of different geometrical microstructures namely dodecagonal pyramids in one sample and hexagonal pits in the other after chemical treatment due to the different polar nature of GaN in both the samples.
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Acknowledgements
Mansi Agrawal thanks Solid State Physics laboratory for the research funding. We also acknowledge the support of GaN MBE group and Characterization group at SSPL.
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Agrawal, M., Mehta, B.R., Muralidharan, R. (2019). Effect of Surface Treatments on the Evolution of Microstructures in GaN Thin Films and GaN/AlGaN/GaN Heterostructures. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_29
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