Abstract
In this chapter, DC, RF and noise behaviour of AlGaN/GaN HEMT with 1 µm gate length are studied performing computer simulations using Silvaco TCAD software. The device exhibits a maximum drain current of 645 mA/mm and maximum transconductance of the 162 mS/mm at the gate voltage of 0 and 2.5 V, respectively. The cut-off frequency (fT) and maximum oscillation frequency of about 9.74 and 32.24 GHz are estimated from the simulated results. In addition, device exhibits a minimum noise figure of 10 dB at maximum frequency of 10 GHz. The simulated results are in good agreement with experimental results suggesting AlGaN/GaN HEMT an optimal choice for high voltage and high power applications.
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Acknowledgements
Authors thank Defence Research and Development Organization, Govt. of India for financial support (CC/TM/ERIPR/GIA/16-17/008). Madhulika acknowledges the financial assistance of University Grants Commission (UGC), Government of India.
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Madhulika et al. (2019). Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMT on SiC Substrate. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_25
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DOI: https://doi.org/10.1007/978-3-319-97604-4_25
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