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Aharonov-Bohm Effect for Neutral Excitons in Quantum Rings

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Physics of Quantum Rings

Part of the book series: NanoScience and Technology ((NANO))

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Abstract

Quantum interference patterns predicted by theory due to the finite structure of neutral excitons in a single layer of InAs quantum rings are corroborated experimentally in the magneto-photoluminescence spectra of these nanostructures. The effects associated to built in electric fields and to the temperature on these Aharonov-Bohm-like oscillations are described and confirmed by complementary experimental procedures. Also a similar behavior was observed in a hybrid structure composed by a topmaster single layer of InAs quantum rings grown on a vertically stacked and laterally aligned InGaAs quantum dot superlattice.

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Notes

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    This section is based on the publication [33], certain parts of which are reproduced here with permission.

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Author information

Authors and Affiliations

  1. Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo, 13565-905, Brazil

    M. D. Teodoro, V. L. Campo Jr., V. López-Richard & G. E. Marques

  2. Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos, São Paulo, 13.566-590, Brazil

    E. Marega Jr.

  3. Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA

    G. J. Salamo

Authors
  1. M. D. Teodoro
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  2. V. L. Campo Jr.
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  3. V. López-Richard
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  4. E. Marega Jr.
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  5. G. E. Marques
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  6. G. J. Salamo
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Corresponding author

Correspondence to E. Marega Jr. .

Editor information

Editors and Affiliations

  1. Institute for Integrative Nanosciences, Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Dresden, Germany

    Vladimir M. Fomin

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Teodoro, M.D., Campo Jr., V.L., López-Richard, V., Marega Jr., E., Marques, G.E., Salamo, G.J. (2018). Aharonov-Bohm Effect for Neutral Excitons in Quantum Rings. In: Fomin, V. (eds) Physics of Quantum Rings. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-95159-1_10

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