Abstract
This work presents a general overview about the origin and manifestation of ionizing radiation-induced effects over CMOS technology-based semiconductor structures. From the characterization of radiation–matter interaction mechanisms and effects, this work summarizes the set of design strategies described in the literature for radiation hardened electronic implementation, considering system level, block level, and device level approaches. Additionally, a final case study is presented characterizing the Total Ionizing Dose TID tolerant operation of the Diamond MOSFET transistor as an innovative alternative of non-standard MOSFET’s layout for space applications.
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Raphael, R.N.S. et al. (2019). Overview About Radiation–Matter Interaction Mechanisms and Mitigation Techniques. In: Iano, Y., Arthur, R., Saotome, O., Vieira Estrela, V., Loschi, H. (eds) Proceedings of the 3rd Brazilian Technology Symposium. BTSym 2017. Springer, Cham. https://doi.org/10.1007/978-3-319-93112-8_23
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DOI: https://doi.org/10.1007/978-3-319-93112-8_23
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