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Electronic and Thermoelectric Properties of CdSnAs2

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Proceedings of the Third International Symposium on Materials and Sustainable Development (SMSD 2017)

Abstract

Electronic and thermoelectric properties of ternary chalcopyrite type CdSnAs2 were studied using the first principles density functional calculations performed in the full potential linear augmented plane wave (FP-LAPW) method as implemented in the WIEN2 k code. The thermoelectric properties are calculated by solving the Boltzmann transport equation within the constant relaxation time approximation. The calculated band gap using the Tran-Blaha modified Becke- Johnson potential (TB-mBJ) of CdSnAs2 compound is in good agreement with the available experimental data. Thermoelectric properties like thermopower, electricalconductivity scaled by relaxation time are calculated as a function of carrier concentration at différent temperatures.

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Correspondence to N. Si Ziani .

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Si Ziani, N., Bouhani-Benziane, H., Baira, M., Belfedal, A.E.K., Sahnoun, M. (2018). Electronic and Thermoelectric Properties of CdSnAs2. In: Abdelbaki, B., Safi, B., Saidi, M. (eds) Proceedings of the Third International Symposium on Materials and Sustainable Development. SMSD 2017. Springer, Cham. https://doi.org/10.1007/978-3-319-89707-3_42

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