Abstract
Parameters characterizing a p-n junction based device like ideality factor n, saturation current Is, shunt resistance Rsh and series resistance Rs are very important since they can give a first idea on conduction processes occurring across the interface of the junction. They also inform about the device performances and the possibilities to optimize them. For a good understanding of the device operation and its performances, these parameters are to be determined as precisely as possible. In this work, a new and simple method is proposed for the analysis the current-voltage (I-V) characteristic of a p-n junction diode. The method involves performing a mathematical operation on the experimental data that allows to calculate the parameters at values of forward current smaller than the reverse saturation current, is firstly applied to a simulated p-n diode. This technique was applied successfully to a heterojunction using antimonide semiconductors and the results were compared to those obtained by using two other methods encountered in the literature.
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Sze, S.M.: Physics of Semiconductor Devices. Wiley, New York (1981)
Shroder, D.K.: Semiconductor Material and Device Characterization. Wiley, New York (1990)
Lee, J.I., Brini, J., Dimitriadis, C.A.: Simple parameter extraction method for non-ideal schottky barrier diodes. Electron. Lett. 34, 1268–1269 (1998)
Aubry, V., Meyer, F.: Schottky diodes with high series resistance: limitations of forward I-V methods. J. Appl. Phy. 76, 7973–7984 (1994)
Radziemska, E.: Dark I-U-T measurements of single crystalline silicon solar cells. Energy Convers. Manage. 46, 1485–1494 (2005)
Jain, A., Kapoor, A.: A new method to determine the diode ideality factor of real solar cell using Lambert W-function. Sol. Energy Mater. Sol. Cells 85, 391–396 (2005)
Bayhan, H.: Study of CdS/Cu(In, Ga)Se2 interface by using n values extracted analytically from experimental data. Sol. Energy 83, 372–376 (2004)
Kavasoglu, N., Kavasoglu, A.S., Oktik, S.: A new method of diode ideality factor extraction from dark I-V curve. Curr. Appl. Phys. 9, 833–838 (2009)
Mikhelashvili, V., Eisenstein, G., Uzdin, R.: Extraction of schottky parameters with a bias dependent barrier height. Solid-State Electron 45, 143–148 (2001)
Slavica, M.P., Milena, D.D., Tatijana, D., Danilo, N., Martin, P.C.: Concerning a novel mathematical approach to the solar cell junction ideality factor estimation. Appl. Math. Model. 39, 3248–3264 (2015)
Evangelou, E.K., Papadimitriou, L., Dimitriades, C.A., Giakoumakis, G.E.: Extraction of schottky diode (and p-n junction) parameters from I-V characteristics. Solid-State Electron 36, 1633–1635 (1993)
Ferhat-Hamida, A., Ouennoughi, Z., Hoffmann, A., Weiss, R.: Extraction of schottky diode parameters including parallel conductance using a vertical optimization method. Solid-State Electron 46, 615–619 (2002)
Chan, D.S.H., Phang, J.C.H.: Analytical methods for the extraction of solar-cell single- and double-diode model parameters from I-V characteristics. IEEE Trans. Electron Dev. 34, 286–293 (1987)
Bashahu, M., Nkundabakura, P.: Review and tests of methods for the determination of the solar cell junction ideality factors. Sol. Energy 81, 856–863 (2007)
Arcipiani, B.: Generalization of the area method for the determination of the parameters of a non-ideal solar cell. Rev. Phys. Appl. 20, 269–272 (1985)
Norde, H.: A modified forward I-V plot for schottky diodes with high series resistance. J. Appl. Phys. 50, 5052–5053 (1979)
Cheung, S.K., Cheung, N.W.: Extraction of schottky diode parameters from forward current-voltage characteristics. Appl. Phys. Lett. 49, 85–87 (1986)
Werner, J.H.: Schottky barrier and pn-junction I/V plots-small signal evaluation. Appl. Phys. 47, 291–300 (1988)
Ortiz-Conde, A., García Sánchez, F.J., Liou, J.J., Andrian, J., Laurence, R.J., Schmidt, E.P.: A generalized model for a two-terminal device and its applications to parameter extraction. Solid-State Electron 38, 265–266 (1995)
Kaminski, A., Marchand, J.J., Laugier, A.: I-V methods to extract junction parameters with special emphasis on low series resistance. Solid-State Electron. 43, 741–745 (1999)
Ranuarez, J.C., Garcia Sanchez, F.J., Ortiz-Conde, A.: Procedure for determining diode parameters at very low forward voltage. Solid-State Electron. 43, 2129–2133 (1999)
Aït-Kaci, H., Nieto, J., Rodriguez, J.B., Grech, P., Chevrier, F., Salesse, A., Joullié, A., Christol, P.: Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range. Phys. Status Solidi. 202, 647–651 (2005)
Rogalski, A.: InAs1-xSbx infrared detectors. Prog. Quant. Electron 13, 191–231 (1989)
Kim, J.D., Razeghi, M.: Investigation of InAsSb infrared photodetectors for near-room temperature operation. Opto-Electron. Rev. 6, 217–230 (1998)
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Mahi, K., Messani, B., Ait-kaci, H. (2018). A New Technique for the Evaluation of the Parameters of GaAlAsSb(p)/GaAlAsSb(n)/InAsSb Double Interface from Current-Voltage Curve Analysis. In: Abdelbaki, B., Safi, B., Saidi, M. (eds) Proceedings of the Third International Symposium on Materials and Sustainable Development. SMSD 2017. Springer, Cham. https://doi.org/10.1007/978-3-319-89707-3_14
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DOI: https://doi.org/10.1007/978-3-319-89707-3_14
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