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Polarity Inversion and Electron Carrier Generation in III-Nitride Compounds

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Epitaxial Growth of III-Nitride Compounds

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 269))

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Abstract

In this chapter, we consider two topics based on theoretical calculations; the surface polarity inversion during the film growth and the electron-carrier generation by structural defects in III-nitride compounds. Some of unique features of III-nitride compounds originate from their wurtzite crystal structure.

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Authors and Affiliations

  1. Department of Physics, Chiba University, Chiba, Japan

    Takashi Nakayama

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  1. Takashi Nakayama
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Correspondence to Takashi Nakayama .

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Editors and Affiliations

  1. Institute for Materials Research, Tohoku University, Sendai, Japan

    Takashi Matsuoka

  2. Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka, Japan

    Yoshihiro Kangawa

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Nakayama, T. (2018). Polarity Inversion and Electron Carrier Generation in III-Nitride Compounds. In: Matsuoka, T., Kangawa, Y. (eds) Epitaxial Growth of III-Nitride Compounds. Springer Series in Materials Science, vol 269. Springer, Cham. https://doi.org/10.1007/978-3-319-76641-6_8

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