Abstract
Memories are circuits designed for the storage of digital values. In a computer system, memories are used in a large variety of storage applications, depending on memory capacity, cost and speed. Figure 6.1 shows the use of memory storage at different hierarchy levels in a computer system.
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Note: Not every reader has access to the published articles of microelectronic conferences and magazines. A lot of effort has therefore been given to refer to those publications that are directly accessible through web pages on the Internet. However, these data may be volatile because some owners update and change the contents on their web pages, so that some of the references below may only be accessible during a short time after the print of this book. Finally a lot more information on the various subjects can be found by searching the Web with the right entry, which can be easily extracted from the corresponding subject. Good Luck!
References
Note: Not every reader has access to the published articles of microelectronic conferences and magazines. A lot of effort has therefore been given to refer to those publications that are directly accessible through web pages on the Internet. However, these data may be volatile because some owners update and change the contents on their web pages, so that some of the references below may only be accessible during a short time after the print of this book. Finally a lot more information on the various subjects can be found by searching the Web with the right entry, which can be easily extracted from the corresponding subject. Good Luck!
Shilpi Birla et al. “Analysis of the data stability and leakage power in the various SRAM cells topologies”, International Journal of Engineering Science and Technology, Vol. 2(7), 2010, 2936–2944, <www.ijest.info/docs/IJEST10-02-07-112.pdf>
Jeffery W. Butterbaugh et al., “Front End Processes”, FUTURE FAB International | Issue 28, January 2009, pp. 75–81, <www.immersionlab.nl/pdf/FF28_Jan_09.pdf>
“A Better Computing Experience”, https://www.sandisk.com/home/ssd, Sandisk, 2017
Empirical Evaluation of NAND Flash Memory Performance, <www.sigops.org/sosp/sosp09/papers/hotstorage_10_desnoyers.pdf>
“More on Future of Toshiba 3D NAND Flash Memory; BiCS will reach for 100 layers and beyond”; https://www.storagenewsletter.com/2016/08/11/more-on-future-of-toshiba-3d-nand-flash-memory/, August 11th, 2016
Kevin Gibb, “First Look at Samsungs 48L 3D V-NAND Flash”, EE Times, April 6th, 2016
Harry J.M. Veendrick, “Nanometer CMOS ICs, from Basics to ASICs”, ISBN 978-3-319-47597-4, Springer 2017
Martin Jared Barclay “Electrical Switching Properties of Ternary and Layered Chalcogenide Phase-Change memory Devices”, <http://scholarworks.boisestate.edu/cgi/viewcontent.cgi?article=1066&context=td>
Rick Merritt, “3D XPoint Steps Into the Light”, EE Times, Jan 14th, 2016
Chris Mellor, “Just ONE THOUSAND times BETTER than FLASH! Intel, Micron's amazing claim”, July 28th 2015, The Register, http://www.theregister.co.uk/2015/07/28/intel micron 3d xpoint/
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Veendrick, H. (2019). Memory Circuits and IP. In: Bits on Chips. Springer, Cham. https://doi.org/10.1007/978-3-319-76096-4_6
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