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Application of In-Situ IR-Ellipsometry in Silicon Electrochemistry to Study Ultrathin Films

  • Jörg Rappich
  • Karsten Hinrichs
  • Guoguang Sun
  • Xin Zhang
Chapter
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 52)

Abstract

This chapter provides an overview of in-situ application of infrared spectroscopic ellipsometry (IRSE) for the characterization of thin films on silicon (Si) prepared and modified by use of electrochemical surface treatments. In-situ IRSE investigations of Si surfaces during electrochemical grafting of ultra-thin layers via diazonium compounds (cathodic process), and thin polymeric layers of polypyrrole and polyaniline (both via anodic processes) are presented and discussed in detail. The film growth was monitored by an increase in layer specific vibrational signatures of molecules or monomers present on the surface or in the layer. Additionally, species postformed after electrochemical processing (i.e. after drying) and over-oxidation of the polymeric layer have been identified as well as the incorporation of dopants in the polymeric layer by their specific vibrational modes. The obtained results are discussed in frame of layer thickness, structure, and are compared to calculated IRSE spectra in case of very thin layers formed via cathodic reduction of diazonium compounds (nitrobenzene and maleimidobenzene) on Si.

Notes

Acknowledgements

The financial support of the European Union through the EFRE program (ProFIT grant, contract no. 10131870/1 and no. 10144388), the Senatsverwaltung für Wissenschaft, Forschung und Kultur des Landes Berlin and the Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie are gratefully acknowledged. The author thanks Dr. M. Gensch, Dr. K. Roodenko, Dr. V. Syritski, and Dr. M.C. Intelmann for valuable discussions.

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Copyright information

© Springer International Publishing AG, part of Springer Nature 2018

Authors and Affiliations

  • Jörg Rappich
    • 1
  • Karsten Hinrichs
    • 2
  • Guoguang Sun
    • 2
  • Xin Zhang
    • 1
  1. 1.Institut für Silizium Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie GmbHBerlinGermany
  2. 2.Leibniz-Institut für Analytische Wissenschaften – ISAS – e.V.BerlinGermany

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