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Application of In-Situ IR-Ellipsometry in Silicon Electrochemistry to Study Ultrathin Films

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Ellipsometry of Functional Organic Surfaces and Films

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 52))

Abstract

This chapter provides an overview of in-situ application of infrared spectroscopic ellipsometry (IRSE) for the characterization of thin films on silicon (Si) prepared and modified by use of electrochemical surface treatments. In-situ IRSE investigations of Si surfaces during electrochemical grafting of ultra-thin layers via diazonium compounds (cathodic process), and thin polymeric layers of polypyrrole and polyaniline (both via anodic processes) are presented and discussed in detail. The film growth was monitored by an increase in layer specific vibrational signatures of molecules or monomers present on the surface or in the layer. Additionally, species postformed after electrochemical processing (i.e. after drying) and over-oxidation of the polymeric layer have been identified as well as the incorporation of dopants in the polymeric layer by their specific vibrational modes. The obtained results are discussed in frame of layer thickness, structure, and are compared to calculated IRSE spectra in case of very thin layers formed via cathodic reduction of diazonium compounds (nitrobenzene and maleimidobenzene) on Si.

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Acknowledgements

The financial support of the European Union through the EFRE program (ProFIT grant, contract no. 10131870/1 and no. 10144388), the Senatsverwaltung für Wissenschaft, Forschung und Kultur des Landes Berlin and the Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie are gratefully acknowledged. The author thanks Dr. M. Gensch, Dr. K. Roodenko, Dr. V. Syritski, and Dr. M.C. Intelmann for valuable discussions.

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Authors and Affiliations

  1. Institut für Silizium Photovoltaik, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekuléstrasse 5, 12489, Berlin, Germany

    Jörg Rappich & Xin Zhang

  2. Leibniz-Institut für Analytische Wissenschaften – ISAS – e.V., Schwarzschildstr. 8, 12489, Berlin, Germany

    Karsten Hinrichs & Guoguang Sun

Authors
  1. Jörg Rappich
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  2. Karsten Hinrichs
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  3. Guoguang Sun
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  4. Xin Zhang
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Correspondence to Jörg Rappich .

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Editors and Affiliations

  1. Leibniz-Institut für Analytische Wissenschaften – ISAS – e.V., Berlin, Germany

    Karsten Hinrichs

  2. Abteilung Analytik, Leibniz-Institut für Polymerforschung Dresden e.V., Dresden, Sachsen, Germany

    Klaus-Jochen Eichhorn

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Rappich, J., Hinrichs, K., Sun, G., Zhang, X. (2018). Application of In-Situ IR-Ellipsometry in Silicon Electrochemistry to Study Ultrathin Films. In: Hinrichs, K., Eichhorn, KJ. (eds) Ellipsometry of Functional Organic Surfaces and Films. Springer Series in Surface Sciences, vol 52. Springer, Cham. https://doi.org/10.1007/978-3-319-75895-4_20

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