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Aryl–Aryl Covalent Coupling on Rutile TiO2 Surfaces

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On-Surface Synthesis II

Part of the book series: Advances in Atom and Single Molecule Machines ((AASMM))

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Abstract

In recent years, enormous progress has been made in developing bottom-up strategies based on the polymerization of specially designed building blocks directly on a supporting surface. So far, selected noble metals have been mostly used as substrates for such on-surface chemical reactions. For the sake of practical applications the semiconductor surfaces clearly represent much more attractive platforms. Especially transition metal oxides exhibiting advantageous optical as well as photo- and electrochemical properties seem to be particularly interesting. In this chapter we describe the strategies for thermally triggered on-surface covalent coupling of aryl halides performed directly on rutile titanium dioxide surfaces. We focus our work on important parameters that need to be considered for understanding and optimization of the polymerization reactions on this model transition metal oxide system.

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Acknowledgements

Support from the Polish Ministry of Science and Higher Education, contract no. 0341/IP3/2016/74 is gratefully acknowledged.

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Authors and Affiliations

  1. Faculty of Physics, Astronomy and Applied Computer Science, Centre for Nanometer-Scale Science and Advanced Materials, NANOSAM, Jagiellonian University, Lojasiewicza 11, 30-348, Krakow, Poland

    Marek Kolmer & Jakub S. Prauzner-Bechcicki

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  1. Marek Kolmer
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  2. Jakub S. Prauzner-Bechcicki
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Correspondence to Marek Kolmer .

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Editors and Affiliations

  1. Donostia International Physics Center, San Sebastián, Spain

    Dimas G. de Oteyza

  2. Materials Physics Center, Centro de Física de Materiales CSIC-UPV/EHU, San Sebastián, Spain

    Celia Rogero

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Kolmer, M., Prauzner-Bechcicki, J.S. (2018). Aryl–Aryl Covalent Coupling on Rutile TiO2 Surfaces. In: de Oteyza, D., Rogero, C. (eds) On-Surface Synthesis II. Advances in Atom and Single Molecule Machines. Springer, Cham. https://doi.org/10.1007/978-3-319-75810-7_7

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