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Nanoscale Transport Imaging of Active Lateral Devices: Static and Frequency Dependent Modes

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Book cover Kelvin Probe Force Microscopy

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 65))

Abstract

Electronic and ionic transport in semiconductors, ionic conductors, and dielectrics underpins multiple applications from information technology devices to electroactive ceramics, batteries, fuel cells, and photovoltaics. In this chapter, we review the applications of Kelvin Probe Force Microscopy (or Scanning Surface Potential Microscopy) to map the charge transport in lateral devices. In these measurements, the SPM probe serves as a non-invasive probe of potentials created by the external electrodes, similar to the four-probe resistance measurements. We briefly discuss the invasiveness of such measurements, as exemplified by Scanning Gate Microscopy. We further discuss extensions of the KPFM based transport measurements to probe frequency dependent transport, an analog to impedance spectroscopy, and frequency mixing phenomena. Finally, implementations of lateral transport measurements in liquids are discussed.

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Notes

  1. 1.

    Of course, in ambient conditions, mobile surface charges contribute to the measured potential. Here we only consider the measurement artifacts.

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Acknowledgements

This research was conducted at and supported by the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. ES acknowledges support under the Cooperative Research Agreement between the University of Maryland and the National Institute of Standards and Technology Center for Nanoscale Science and Technology, Award 70NANB14H209, through the University of Maryland.

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Authors and Affiliations

  1. Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA

    Evgheni Strelcov

  2. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37996, USA

    Mahshid Ahmadi

  3. Oak Ridge National Laboratory, The Center for Nanophase Materials Sciences, Oak Ridge, TN, 37831, USA

    Sergei V. Kalinin

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  1. International Iberian Nanotechnology Laboratory, Braga, Portugal

    Sascha Sadewasser

  2. Department of Physics, University of Basel, Basel, Switzerland

    Thilo Glatzel

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Strelcov, E., Ahmadi, M., Kalinin, S.V. (2018). Nanoscale Transport Imaging of Active Lateral Devices: Static and Frequency Dependent Modes. In: Sadewasser, S., Glatzel, T. (eds) Kelvin Probe Force Microscopy. Springer Series in Surface Sciences, vol 65. Springer, Cham. https://doi.org/10.1007/978-3-319-75687-5_10

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