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Spectroscopic Ellipsometry for Photovoltaics pp 227–252Cite as

Amorphous/Crystalline Si Heterojunction Solar Cells

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Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 212))

Abstract

For characterization of hydrogenated amorphous silicon (a-Si:H )/crystalline silicon (c-Si ) heterojunction structures, spectroscopic ellipsometry (SE) has been applied extensively. The ellipsometry method is particularly powerful for the determination of quite thin a-Si:H structures (~50 Å) incorporated into the devices. In a-Si:H/c-Si heterojunction solar cells , the formation of ideal a-Si:H/c-Si interface is critical to achieve high conversion efficiencies. For the detection of unfavorable interface formation, such as epitaxial growth of intended a-Si:H layers, SE provides an easy and quick tool. In this chapter, we will overview the ellipsometry analysis of a-Si:H layers formed on c-Si substrates. The analysis examples for detrimental Si epitaxial growth that occurs rather easily at low process temperatures are also presented. This chapter further addresses the interpretation of a-Si:H dielectric functions based on local amorphous networks . The variation of optical constants in a-SiO:H and a-SiC:H alloys, which have been applied to c-Si heterojunction solar cells, is also reviewed in this chapter.

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Authors and Affiliations

  1. Gifu University, 1-1 Yanagido, Gifu, 501-1193, Japan

    Hiroyuki Fujiwara

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  1. Hiroyuki Fujiwara
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Correspondence to Hiroyuki Fujiwara .

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  1. Department of Electrical, Electronic and Computer Engineering, Gifu University, Gifu, Japan

    Hiroyuki Fujiwara

  2. Department of Physics and Astronomy, The University of Toledo, Toledo, OH, USA

    Robert W. Collins

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Fujiwara, H. (2018). Amorphous/Crystalline Si Heterojunction Solar Cells. In: Fujiwara, H., Collins, R. (eds) Spectroscopic Ellipsometry for Photovoltaics. Springer Series in Optical Sciences, vol 212. Springer, Cham. https://doi.org/10.1007/978-3-319-75377-5_9

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